It is elaborated the crystal growth technique on base of Cyropulos method that allows to receive the sapphire single crystals of high quality with small dislocation density, low levels of X-ray luminescence and thermoluminescence, high transparency, and high radiation resistance. The main features of developed technique are: low temperature gradient in growth zone, acute-angled crystallization front, and absence of any mechanical displacement during growing process.
Some other growing factors influencing on crystal quality are discussed.