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The properties of AlGaN/GaN heterostructures have been a subject of great activity because of their application in high frequency, high power, and high temperature devices. Magnetotransport measurements give the possibility to study the properties of a two-dimensional electron gas. Indeed, Shubnikov-de Haas oscillations of a two-dimensional electron gas can be observed at high magnetic fields. Moreover, magnetoresistance measurements close to zero magnetic field give the possibility to investigate the weak localization and weak antilocalization arising from AlGaN/GaN heterostructures. The latter is related to the spin-orbit interaction on the spin of the carriers present in these heterostructures and is a key-feature of the spin-transistor proposed by Datta and Das . As a matter of fact, the spin orientation between the electrodes of this novel device should be manipulated by the controllable strength of the spin-orbit interaction in the two-dimensional electron gas. In order to obtain information on spin-orbit effects in AlGaN/GaN heterostructures we therefore analyzed the weak antilocalization observed in the magnetoresistance.
Polarization-doped AlGaN/GaN heterostructures were grown by metalorganic vapor phase epitaxy (MOVPE) on the (0001) surface of sapphire substrates. First a 3 mm-thick GaN buffer layer was grown, followed by a Al0.3Ga0.7N layer with a thickness of 20 nm. Magnetotransport measurements were performed over a magnetic field range from –50 mT to +50 mT at various temperatures between 0.1 and 18 K. The Hall-bars were prepared by optical lithography and Ar+-ion-beam-etching technique. The metals used for the ohmic contacts were Ti/Al/Ni/Au. The mobility and carrier concentration in the single occupied subband were obtained from the Shubnikov-de Haas oscillations with the respective values of 9100 cm2/Vs and 6.2×1012 cm-2.
In our case, the Shubnikov-de Haas oscillations of the two-dimensional electron gas reveal the occupation of a single subband in the nearly triangular quantum well. At low magnetic field, weak localization as well as weak antilocalization were observed, showing that strong spin-orbit interaction is present in our structures. A previous report  explained the weak-antilocalization as being related to the intersubband scattering due to the occupation of a second subband in a modulation-doped quantum well. We show that weak antilocalization is also present in a polarization-doped quantum well with a single subband being occupied. In this perspective, temperature-dependent weak antilocalization measurements will be presented and analyzed using adequate theoretical models. Finally, the relevant scattering times like elastic scattering time, dephasing time as well as spin-orbit scattering time have been extracted.  S. Datta and B. Das, Appl. Phys. Lett. Vol. 56, pp. 665-667, 1990.  J. Lu et al., Appl. Phys. Lett., Vol. 85, pp. 3125-3127, 2004
We report on magnetic properties of the GaN layers implanted with 3d transition metal ions. GaN layers grown by MOVPE on sapphire substrates, p- or n-doped, were implanted by Mn, Cr or V ions with a dose of 5×1016 cm−2 and implantation energy of 200 keV. Subsequently, a rapid thermal annealing in nitrogen atmosphere for 5 minutes at different temperatures (700°C – 1050°C) was performed. The magnetization as a function of magnetic field as well as the dependence on temperature revealed paramagnetic behavior for all samples. In addition, an antiferromagnetic coupling between implanted ions was found.
The effect of Rashba spin-orbit coupling on the transport properties of InGaAs/InP quantum wire structures is investigated. The geometry of the wire structures was defined by selective wet chemical etching. For wires without a gate a clear beating pattern, due to the presence of the Rashba spin-orbit coupling, is observed for wires with a width down to 600 nm. For narrower wires no beating pattern is found. The experimental observations are explained by contribution of the Rashba spin-orbit coupling to the one-dimensional magnetosubbands. By depleting the one-dimensional conductor by means of a gate electrode the Rashba coupling strength could be controlled.
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