Highly transparent and conducting Fluorine doped zinc oxide thin films were deposited using spray pyrolysis method on glass substrates held at 450 °C. The X-ray diffraction study revealed that as the dopant concentration increases in ZnO films, the intensity of the preferential orientation of (002) reflection decreased and (101) was found to increase up to 5 at. % F. The crystallite size was varied from 40 to 50 nm with dopant concentration. The optical band gap of the un-doped films was 3.30 eV and it increased to 3.34 eV for 3 at. % F. The refractive index of the films was increased from 2.05 to 2.18 with the increase of dopant concentration from 0 to 5 at. %. The scanning electron microscopy results depicted that the microstructure of ZnO: F films highly influenced by the fluorine doping. After annealing the films in hydrogen atmosphere, the resistivity of the films decreased as increase the dopant concentration and it is 4×10−3 Ω cm for 3at. % F beyond which it increased. The mobility of the charge carriers was 14 cm2/ V sec and the carrier concentration was 7.8×1019 cm3 obtained for the films doped with 3 at. % of fluorine concentration in the starting solution.