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The present work deals with the comparative investigation of Si-ncs embedded in SiO2 and Al2O3 dielectrics grown by RF magnetron sputtering on fused quarts substrate. The effect of post-deposition processing on the evolution of microstructure of the films and their optic and luminescent properties was investigated. It was observed that photoluminescence (PL) spectra of Six(SiO2)1-x films showed one PL band, which peak position shifts from 860 nm to 700 nm when the x decreases from 0.7 to 0.3. It is due to exciton recombination in Si-ncs. For Six(Al2O3)1-x films, several PL bands peaked at about 570-600 nm and 700-750 nm and near-infrared tail or band peaked at about 800 nm were found. Two first PL bands were ascribed to different oxygen-deficient defects of oxide host, whereas near-infrared PL component is due to exciton recombination in Si-ncs. The comparison of both types of the samples showed that the main radiative recombination channel in Six(SiO2)1-x films is exciton recombination in Si-ncs, while in Six(Al2O3)1-x films the recombination via defects prevails due to higher amount of interface defects in the Six(Al2O3)1-x caused by stresses.
A technology of anisotropic etching of GaAs (100) samples with two
different types of geometric disorder (dendrite, quasi-grating) has been
elaborated. The geometric statistical parameters of micro(nano)relief
were investigated using bearing analysis. The measurements of the radii
of curvature have shown that the samples were rather deformed,
with nonuniform strain lateral distribution over the wafer areas.
The radii of curvature were different for different samples, depending
on surface treatment. The X-ray diffraction data indicate that the
subsurface region of anisotropically etched GaAs crystal and epitaxial
films grown on such substrates are not worse than those of a crystal with
smooth chemically polished surface. Geometric disorder of such surfaces
leads to enhancement of the diffuse contributions on the rocking
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