We present a combined Capacitance-Voltage (C-V), Deep Level Transient Spectroscopy (DLTS) and Photocurrent (PC) study of short-term instabilities of InGaN/GaN LEDs submitted to forward current aging tests at room temperature. C-V profiles detect changes consisting in apparent doping and/or charge concentration increase within the quantum wells. This increase is correlated to dramatic modifications in the DLTS spectrum when the reverse bias and filling pulse are properly adjusted in order to probe the quantum well region. The new distribution of the electronic levels detected by DLTS could explain the observed decrease in the light emission efficiency [1,2] of the device, as the deep levels generated during the stress may provide alternative recombination paths for free carriers. The photocurrent spectra do not change in shape during stress, although their amplitude slightly decreases. This is related to a decrease of the device yield, in this photodetector configuration, with increasing aging time. Thus, we can suggest that the introduction of new defect levels in the bulk material lowers the free carrier mobility.