3 results
Thermally-activated effects on photoluminescence line shape of InAs/GaAs quantum dot heterosystems
-
- Journal:
- The European Physical Journal - Applied Physics / Volume 38 / Issue 1 / April 2007
- Published online by Cambridge University Press:
- 14 February 2007, pp. 21-25
- Print publication:
- April 2007
-
- Article
- Export citation
Characterization of the carrier confinement for InGaN/GaN light emitting diode with multiquantum barriers
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E3.27
- Print publication:
- 2004
-
- Article
- Export citation
AlGaN/InGaN Heterostructure Field Effect Transistors Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G11.11
- Print publication:
- 2000
-
- Article
- Export citation