Dilute HF/RCA and IEMC/SC2 cleans have been evaluated on two process lines with different metallic contamination levels. VPD-DSE-TXRF and SPV techniques were used to monitor the metallic contamination. Gate oxide integrity(GOI) tests were performed on several structures. Both HF/RCA and IMEC/SC2 cleans have shown good Qbd and Ebd results for the clean process line. Lower Qbd and Ebd values were obtained for both cleans in the relatively contaminated process line. These results suggest that poor GOI is related to the metallic contamination in the oxide or at the SiO2/Si interface.