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1 results

Heteroepitaxy of GaAs on Si by MOCVD
Tetsuo Soga, Toru Imori, Masayoshi Umeno
Journal: MRS Online Proceedings Library Archive / Volume 91 / 1987
Published online by Cambridge University Press: 28 February 2011, 69
Print publication: 1987
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The stress and strain of GaAs on Si grown by using strained superlattice intermediate layers and a two-step growth method are characterized by the photoluminescence, X-ray diffraction and the curvature radius. The strain of GaAs grown using strained superlattice intermediate layers is smaller than that grown by the two-step growth method.