To address the shortcomings of existing methods for rotorcraft searching, positioning, tracking and landing on a ship at sea, a dual-channel LIDAR searching, positioning, tracking and landing system (DCLSPTLS) is proposed in this paper, which utilises the multi-pulse laser echoes accumulation method and the physical phenomenon that the laser reflectivity of the ship deck in the near-infrared band is four orders of magnitude higher than that of the sea surface. The DCLSPTLS searching and positioning model, tracking model and landing model are established, respectively. The searching and positioning model can provide estimates of the azimuth angle, the distance of the ship relative to the rotorcraft and the ship's course. With the above parameters as inputs, the total tracking time and the direction of the rotorcraft tracking speed can be obtained by using the tracking model. The landing model can calculate the pitch and the roll angles of the ship's deck relative to the rotorcraft by using the least squares method and the laser irradiation coordinates. The simulation shows that the DCLSPTLS can realise the functions of rotorcraft searching, positioning, tracking and landing by using the above parameters. To verify the effectiveness of the DCLSPTLS, a functional test is performed using a rotorcraft and a model ship on a lake. The test results are consistent with the results of the simulation.

Celestial navigation is an important means of maritime navigation; it can automatically achieve inertially referenced positioning and orientation after a long period of development. However, the impact of different accuracy of observations and the influence of nonstationary states, such as ship speed change and steering, are not taken into account in existing algorithms. To solve this problem, this paper proposes an adaptively robust maritime celestial navigation algorithm, in which each observation value is given an equivalent weight according to the robust estimation theory, and the dynamic balance between astronomical observation and prediction values of vessel motion is adjusted by applying the adaptive factor. With this system, compared with the frequently used least square method and extended Kalman filter algorithm, not only are the real-time and high-precision navigation parameters, such as position, course, and speed for the vessel, calculated simultaneously, but also the influence of abnormal observation and vessel motion status change could be well suppressed.

Limited literatures report the management of congenital left atrial appendage aneurysm (LAAA) which is extremely rare. Chest X-ray firstly showed an enlarged left cardiac silhouette for a 3-year-old patient with pneumonia. Echocardiography and magnetic resonance imaging confirmed a large cyst attached to the left atrium. Aneurysmectomy was performed through lateral thoracotomy using step-by-step method and under the guidance of transoesophageal echocardiography. We aim to show the safety and efficacy of this approach applied to children associated with congenital LAAA.

The personalization of products and services has become an inevitable trend in the manufacturing and service industry, but it is very difficult to identify users' personalized requirements accurately. This paper solves this problem by constructing an identifying model for personalized requirement based on user profiling. Firstly, the framework of the proposed model and the process of identifying the user's personalized requirements with this model are introduced, and then an experimental scheme for obtaining users' profiling data is designed. On this basis, an experiment is performed by investigating users' requirements for the computer to obtain the data, and the data are used for the analysis based on the proposed model. The analysis result shows that the model can reveal the difference among heterogeneous users well, find out the implicit requirements of users, and identify the gap between existing products and users' personalized requirements, which provides support to the subsequent improvement of product design.

While assessing the environmental impact of nuclear power plants, researchers have focused their attention on radiocarbon (14C) owing to its high mobility in the environment and important radiological impact on human beings. The 10 MW high-temperature gas-cooled reactor (HTR-10) is the first pebble-bed gas-cooled test reactor in China that adopted helium as primary coolant and graphite spheres containing tristructural-isotropic (TRISO) coated particles as fuel elements. A series of experiments on the 14C source terms in HTR-10 was conducted: (1) measurement of the specific activity and distribution of typical nuclides in the irradiated graphite spheres from the core, (2) measurement of the activity concentration of 14C in the primary coolant, and (3) measurement of the amount of 14C discharged in the effluent from the stack. All experimental data on 14C available for HTR-10 were summarized and analyzed using theoretical calculations. A sensitivity study on the total porosity, open porosity, and percentage of closed pores that became open after irradiating the matrix graphite was performed to illustrate their effects on the activity concentration of 14C in the primary coolant and activity amount of 14C in various deduction routes.

It is found that there is an upper-limit critical power for self-guided propagation of intense lasers in plasma in addition to the well-known lower-limit critical power set by the relativistic effect. Above this upper-limit critical power, the laser pulse experiences defocusing due to expulsion of local plasma electrons by the transverse ponderomotive force. Associated with the upper-limit power, a lower-limit critical plasma density is also found for a given laser spot size, below which self-focusing does not occur for any laser power. Both the upper-limit power and the lower-limit density are derived theoretically and verified by two-dimensional particle-in-cell simulations. The present study provides new guidance for experimental designs, where self-guided propagation of lasers is essential.

Energetic electron beam generation from a thin foil target by the ponderomotive force of an ultra-intense circularly polarized laser pulse is investigated. Two-dimensional particle-in-cell (PIC) simulations show that laser pulses with intensity of 1022–1023 Wcm−2 generate about 1–10 GeV electron beams, in agreement with the prediction of one-dimensional theory. When the laser intensity is at 1024–1025 Wcm−2, the beam energy obtained from PIC simulations is lower than the values predicted by the theory. The radiation damping effect is considered, which is found to become important for the laser intensity higher than 1025 Wcm−2. The effect of laser focus positions is also discussed.

In vitro bulb scales of Lilium longiflorum×L. formosanum were used as explants to develop a highly efficient regeneration system. A high regeneration rate (100%) was reached through organogenesis on basal Murashige and Skoog (MS) medium supplemented with 1.0 mg/l 6-benzylaminopurine (6-BA) and 1.0 mg/l naphthaleneacetic acid (NAA). A genetic transformation system for the lily was developed using an Agrobacterium tumefaciens-mediated method. An improved genetic transformation rate (12‰) was obtained when the explants were pre-cultured for 3 days, immersed in bacterial suspension (OD600≈0.8) for 5 min, and co-cultivated for 5 days. The binary vector pBI121 containing Zm401, a maize pollen-specific gene, was introduced into the Agrobacterium strain LBA4404 and transformed into the explants using the genetic transformation system. Gene integration into the lily genome was confirmed by polymerase chain reaction (PCR) and PCR–Southern analysis. These results could lead to the production of new pollenless lily plants.

The surface morphology of GaN films grown by molecular beam epitaxy (MBE) is investigated by scanning tunneling microscopy (STM). A comparison is made between flat and vicinal surfaces. The wurtzite structure of GaN leads to special morphological features such as step pairing and triangularly shaped islands. Spiral mounds due to growth at screw threading dislocations are dominant on flat surfaces, whereas for vicinal GaN, the surfaces show no spiral mound but evenly spaced steps. This observation suggests an effective suppression of screw threading dislocations in the vicinal films. This finding is confirmed by transmission electron microscopy (TEM) studies. Continued growth of the vicinal surface leads to step bunching that is attributed to the effect of electromigration.

The surface morphology of GaN films grown by molecular beam epitaxy (MBE) is investigated by scanning tunneling microscopy (STM). A comparison is made between flat and vicinal surfaces. The wurtzite structure of GaN leads to special morphological features such as step pairing and triangularly shaped islands. Spiral mounds due to growth at screw threading dislocations are dominant on flat surfaces, whereas for vicinal GaN, the surfaces show no spiral mound but evenly spaced steps. This observation suggests an effective suppression of screw threading dislocations in the vicinal films. This finding is confirmed by transmission electron microscopy (TEM) studies. Continued growth of the vicinal surface leads to step bunching that is attributed to the effect of electromigration.

In order to verify the results predicted by the model in Part I of this work [1], permeation experiments were conducted at room and high temperatures on fully-annealed-commerciallypure iron with two kinds of surface treatment, one group with plasma cleaning and presputtering and the other without it. The experimental results show that the diffusivity evaluated by the new model is independent of sample thickness and surface treatment, while the diffusivity evaluated by the time-lag model varies two orders of magnitude. The experimental results confirm that a fine surface treatment yields a low energy barrier for desorption. The energy barrier for either group is higher than the activation energy of diffusion. Consequently, the ratio of drift velocity through surface to that in bulk increases with increasing temperature and makes the time-lag method appropriate at elevated temperatures.

A new model on hydrogen permeation is proposed, considering absorption and desorption processes on the sample surfaces. Analytical solution, satisfying the flux continuity rather than the concentration boundary conditions, is derived from the model. Drift velocity through surface and drift velocity in bulk are introduced and their ratio determines the validity of the time-lag model. When the ratio of drift velocity through surface over that in bulk approaches infinity, the proposed model is reduced to the time-lag one. The diffusivity and the drift velocity through surface can be evaluated by fitting the entire normalized permeation curve. The obtained results can predict the effects of temperature, sample thickness and energy barriers of absorption and desorption on the permeation process. The thickness effect occurred in using the time-lag model is well explained by the effects of absorption and desorption on the permeation process.

We report the study of high-dose Si-implanted GaAs containing doses ranging from 1×1014 to 1×1015 cm-2 and with subsequent anneals at 850°C for 1 hour. At doses ≥ 3×1014 cm-2, a severe reduction of carrier concentration and anomalous Si diffusion are observed in the near-surface region. In the same region, small, near-spherical voids are found by transmission electron microscopy. In contrast, for samples implanted with doses ≤ 1×1014 cm-2, voids are not found, and both normal carrier activation and Si diffusion profiles are observed. The concurrent onset of these three phenomena in the same region in high-dose samples leads us to conclude that the severe reduction of carrier concentration and anomalous Si diffusion are attributable to the formation of voids.

We have investigated the relationship between electrical activation and residual defects in GaAs implanted with 1 MeV Si ions to a fluence of 3×1015 cm−2 and subsequently annealed, using rapid thermal annealing (RTA) for 10 seconds, at temperatures up to 1050°C. Hall measurements show n-type activation that increases in magnitude with increasing annealing temperature to reach a sheet carrier concentration of 2.6×1014 cm−2 after RTA at 1050°C. Two main types of extended defects, perfect and partial dislocation loops, had previously been identified in the as-implanted samples. In addition, a large number of discrete point defect complexes are certainly created but escape detection. We show here a correlation between the annealing of the defects and the recovery of the electrical transport properties. Most of the point defects anneal out between room temperature and 700°C, and it is in this temperature regime that the transport properties show their most significant improvement. For annealing temperatures between 700°C and 1050°C, the mobility of the carriers decreases slightly while the carrier concentration gradually approaches saturation. Concurrently, the loops grow in size while decreasing in number and eventually anneal out. However, after annealing at 1050°C, while most of the extended defects have disappeared, only about 9% of the implanted atoms had been activated, suggesting that residual point defect centers control the activation of Si dopants in MeV implanted GaAs.