AIN films were grown by plasma source Molecular Beam Epitaxy (PSMBE) on n-type Si(111) substrates under various growth parameters. I-V and C-V-f dependencies of AI-AIN-Si(111) MIS structures were measured. Electrical characterization of MIS structures with PSMBE grown textured AIN thin films as insulator shows that low current leakage can be achieved, although some samples have rectifying I-V dependencies. C-V-f characteristics reveal evidence of the presence of different types of traps. Additional investigations are needed in order to determine the nature of these traps.
