4 results
Double-Ion-Implanted GaN MESFETs with Extremely Low Source/Drain Resistance
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF13-06
- Print publication:
- 2005
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Fabrication and electrical characteristics of Ti/Al ohmic contact to Si+ implanted GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF14-03
- Print publication:
- 2005
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Novel Doping Process for Ultra-Shallow Junction: Rapid Vapor-Phase Direct Doping (RVD)
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- Journal:
- MRS Online Proceedings Library Archive / Volume 259 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 493
- Print publication:
- 1992
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Growth of A β-SiC Filli on a Si Substrate by a Direct Carbonization Method
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- Journal:
- MRS Online Proceedings Library Archive / Volume 220 / 1991
- Published online by Cambridge University Press:
- 22 February 2011, 569
- Print publication:
- 1991
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