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We present calculation of electronic structure of impurity in nanowire. Ionization energy of impurities are calculated in dependence on nanowire radius. Direct Hamiltonian matrix diagonalization method with the physically reasonable approximate potential is employed for finding the exact solution of Schrödinger equation in the effective-mass approximation. It is shown that shallow donors are strongly influences by space confinement, which is expressed in sharp increase of ionization energy. Calculations show that effect of space confinement on deep impurities is less pronounced. The obtained results give hope that by selecting optimal value of nanowire radius compensation processes can be suppressed.
The influence of oxygen treatment on carrier transport properties of pure ZnO and ZnO:Cl thin films grown by MOCVD were studied. The experimentally obtained values of carrier concentrations after oxyden treatment at different temperatures, were compared with the the results obtained from thermodynemical analysis of the system: ZnO:Cl-Oxyen vapour pressure, using method of quasi-chemical reactions (QCR).
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