We have investigated band gap states in tris(8-hydroxyquinoline) aluminum (Alq3) with and without quinacridone (Qd) doping on fabricated indium-tin-oxide (ITO)/Alq3(:Qd)/LiF/Al devices by using a deep-level optical spectroscopy (DLOS) technique. Non-doped Alq3 sample shows a discrete trap level located at ∼1.39 eV below the lowest unoccupied molecular orbital band in addition to near-band-edge transitions at 2.2 - 3.6 eV. The pronounced 1.39 eV level is attributable to an intrinsic nature of Alq3 and can be active as an efficient generation-recombination (GR) center that may impact the photophysical properties. On the other hand, Qd-doped Alq3 sample exhibits a new deep level at ∼2.40 eV with increasing the double carrier injection rate, corresponding to the highest occupied molecular orbital band of the Qd. Simultaneously, this GR center is subject to charge up positively due to the presence of holes injected into the Qd doping level for Qd-doped Alq3.