Undeniably, one of the rare characteristics of James C. Scott's scholarship is that his analytical insights are widely recognized in many fields beyond political science and Asian studies. Scott's contributions to the vast literatures of agrarian and environmental studies, the theory of hegemony and resistance, development studies, postcolonial studies, state formation, and anarchism, to name just a few, are recognized by scholars of diverse disciplines as new standards that challenge widely accepted assumptions and theories and reveal underappreciated aspects and untold narratives of social history—particularly for those who, under normal conditions, do not raise their voice and did not have letters to leave records.

Mono-crystalline elastic constants of equiatomic quinary Cr-Mn-Fe-Co-Ni high entropy alloy with the fcc structure have experimentally been determined by a resonance ultrasound spectroscopy at room temperature. The values of the bulk modulus of the high entropy alloy experimentally determined are similar to other conventional fcc metals when the values are normalized by the melting points. This indicates that the entropy change at melting is similar to that of conventional metals. The values of Pough’s index and the Cauchy pressure are determined as 1.79 and -11.6 GPa, respectively. When the ductility of the alloy is judged from the indices, the ductility of the high entropy alloy is limited. In order to explain the negative Cauchy pressure of the high entropy alloy, it is required to assume that relatively strong directional interatomic bondings like intermetallic compounds exist in the alloy though the crystal is disordered solid solution.

A Cu- and Ni-free Zr-based metallic glass with high glass-forming ability was found in the Zr-Al-Co ternary system. The eutectic Zr56Al16Co28 alloy could be cast into glassy cylindrical rods with diameters up to 18 mm. The glassy alloy exhibited high tensile fracture strength of 1830 MPa and low Young's modulus of 83 GPa in conjunction with better corrosion resistance compared with the glassy Zr57Nb5Al10Ni12.6Cu15.4 in a simulated body fluid. Hydrothermal-electrochemical treatment in the aqueous 5M-NaOH solution resulted in the formation of amorphous sodium cobaltate layer on the surface of glassy Zr56Al16Co28 alloy. Hydroxyapatite was spontaneously formed on the surface of the alloy, indicating bioactivity after surface modification. The discovery of a Cu- and Ni-free Zr-based metallic glass with a critical diameter larger than 1 cm in conjunction with excellent mechanical properties, superior corrosion resistance, and good bioactivity may open up the application field as biomaterials.

Incorporation of Si ion implantation to GaN metal semiconductor field effect transistor (MESFET) processing has been demonstrated. The channel and source/drain regions formed using Si ion implantation into undoped GaN on sapphire substrate. In comparison with the conventional devices without ion implanted source/drain structures, the ion implanted devices showed excellent device performance. On-state resistance reduces from 210 Ω-mm to 105 Ω-mm. Saturation drain current and maximum transconductance increase from 36 mA/mm to 78 mA/mm and from 3.8 mS/mm to 10 mS/mm, respectively.

Ti/Al ohmic contact with an extremely low specific contact resistance has been formed by the deposition of Ti and Al films on Si+ lanted GaN. The ohmic contact formed by annealing at 600 o C of Ti film with a thickness of 50 nm and Al film with a thickness of 200 nm reveals the good smooth surface and uniform structure as compare to those of contacts formed above 700 °C, which is correlated to whether the Al-Ti alloy is melted during the annealing of ohmic contact or not. The specific contact resistance of 2 × 10-6Ω-cm2 is obtained for Si+ implanted GaN with a dose of 5 × 1013 cm-2. As Si ion dose increases to 5 × 1014 /cm2, the specific contact resistance is reduced to 2 × 10-8 Ω-cm2. It is revealed that the selective doping at high impurity concentration in the surface region by Si+ implantation is useful to reduce the contact resistance for Ti/Al contact to GaN.

In this study, doped lanthanum gallate (LSGM with the composition La0.9Sr0.1Ga0.8Mg0.2O3-δ, LSGMC with the composition La0.8Sr0.2Ga0.8Mg0.15Co0.05O3-δ) films for an electrolyte of the solid oxide fuel cell (SOFC) were prepared by pulsed laser deposition (PLD) technique. In the vacuum chamber, LSGM or LSGMC targets were set on the rotating target holder. A KrF excimer laser was introduced into the chamber at an incident angle of about 45 degree. The doped LaGaO3 film was deposited onto NiO substrates without heating in argon ambient gas. The NiO substrate can be used directly as an electrode in the fabrication of the SOFC. The deposited LSGM films were characterized by X-ray diffraction (XRD), secondary ion mass spectroscopy (SIMS) and scanning electron microscopy (SEM). As-deposited films were amorphous. After post annealing at 1273K for 6-10 hours, crystalline LaGaO3 was obtained. Films with thickness greater than several 10 μm showed an uniform and dense morphology. No gas leakage was found using thick films, which is an important characteristic for an electrolyte in fuel cells. The composition of the deposited films was slightly different to that of the target.

We have investigated physical and electrical properties of Al2O3, HfO2, and their alloy films deposited on 300mm Si wafers by Atomic Layer Deposition (ALD). It is found that Al2O3 films are not crystallized even after the heat treatment of 1050°C, while HfO2 films are already crystallized even after a-Si deposition (530°C). The crystallization temperature can be higher by adding Al2O3 to HfO2. It is confirmed by in-plane XRD and plane views of TEM that HfAlOx films with lower Hf content (Hf/(Hf+Al) <30%) are amorphous without phase separation after annealing at 1050°C and 5sec. The dependences of equivalent oxide thicknesses (EOT) on the physical thicknesses of Al2O3, HfAlOx (Hf/(Hf+Al)∼22%), and HfO2 films in poly-silicon gate capacitors indicate that those dielectric constants k are ∼9, 14, and 23, respectively. The gate dielectric with EOT of 1.5nm and the leakage current density Jg of 3mA/cm2 can be fabricated with 2nm-thick HfAlOx (22%) film.

YbMnO3 (Yb/Mn = 0.96) thin films were prepared on Y2O3(111)/Si(111). Although the sample exhibited ferroelectric type C-V hysteresis, the window width changed depending on the applied bias voltage. Hence, the ferroelectric type hysteresis might include the effect of space charge. To make clear the C-V behavior caused by only ferroelectricity, and to obtain the optimal relationship between ferroelectric and insulator layer thicknesses, the C-V behavior at high frequency was computed for MFIS structure. Relationships between the counter bias voltage applied to the ferroelectric layer and the thickness of dielectric layer were also demonstrated. Compared with the calculated results, experimental C-V characteristics are discussed.

We have been proposing YMnO3 with low remanent polarization and dielectric permittivity as a transistor type FeRAM. Conventional C-V measurements are normally used to evaluate the ferroelectricity of ferroelectric thin films on Si substrates. For ferroelectric thin films with low polarization, however, there are some issues to understand the C-V hysteresis. For example, interfacial polarization and space charge affect the C-V hysteresis. The effect of interfacial polarization on C-V behavior was calculated assuming the connection of ferroelectric and dielectric layers with different resistivity. If a ferroelectric layer with a leakage current of 1×10-6 A/cm2 is connected to the dielectric layer with a leakage current of 1×10-9 A/cm2, a charge density of 10-9 C/cm2 should be generated in the period of 0.2 sec. Space charge should have a longer time constant for accumulating the charge. Pulsed C-V measurement must be effective to avoid these issues. This paper proposes a simple method to evaluate the real component of ferroelectricity in the C-V hysteresis using YMnO3 or ZnO:Li with very low remanent polarization.

We have been proposing the use of RMnO3 (R: rare earth elements) films for metalferroelectric- semiconductor field effect transistor (MFSFET)-type ferroelectric random access memories (Ferroelectric RAMs). This report describes the progress of YMnO3 and YbMnO3 films for FET type FeRAM application. Although highly (0001)-oriented YMnO3 films are easily obtained on a MgO, ZnO/Sapphire, Pt/Sapphire and Pt/Si substrates, it was very hard to obtain the crystalline films directly on Si or on SiO2/Si substrate. A Y-Mn-O buffer layer improved the crystallinity of the YMnO3 films on Si, and we got the C-V curve with ferroelectric hysteresis. The real ferroelectric component responsible for the C-V hysteresis was calculated to be just 8.4 nC/cm2 by pulse measurements. On the other hand, Y2O3 buffer layer drastically improved the dielectric properties. The window width of the C-V hysteresis does not change by changing the sweep rate and measurement frequency.

We have proposed ReMnO3 (Re:rare earth) thin films, as a new candidate for nonvolatile memory devices. In this paper, we try to fabricate (0001) oriented YMnO3 films on (111)MgO, (0001)ZnO:Al/(0001) sapphire and (111)Pt/(111)MgO using rf magnetron sputtering. We succeed in obtaining (0001) epitaxial YMnO3 films on (111) MgO and (0001)ZnO:Al/(0001)sapphire substrate, and polycrystalline films on (111)Pt/(1 11)MgO for the first time. Electrical property of the bottom electrode (ZnO:Al) changes with varying the deposition condition of YMnO3 films. However, we find an optimum deposition condition of ZnO:Al film such that it functions as a bottom electrode even after YMnO3 film deposition. The dielectric properties of the epitaxial and polycrystalline YMnO3 films are almost the same. The YMnO3 films show leaky electrical properties. This may be caused by a change in the valence electron of Mn from 3+.

La:Mn = 1:1 mixtures of lanthanum oxide and manganese carbonate were heat-treated under various oxygen partial pressures at 1400 °C or 1300 °C. The Mn valence of the samples was measured by a chemical analysis, and the crystal structures were refined by the powder x-ray diffraction and the Rietveld analysis. A novel orthorhombic perovskite phase, belonging to the space group Pbnm and containing - Mn2+ ions, was formed by heat-treatment under low oxygen partial pressures. The structure was very close to a cubic symmetry. It is supposed that the micro Jahn-Teller effects of Mn2+ ions were nearly canceled by one another.