Laser annealed junctions and advanced ultra shallow junctions are studied in both atomistic modeling and experiments. SIMS and sheet resistance measurement for spike-RTA + Laser annealing show that additional laser annealing after spike-RTA (“+Laser”) improve the dopant activation level without increasing in junction depth. “+Laser” effect become effective in the combination of low spike-RTA temperature and high laser temperature. This effect is significant for As doped layer. Spike-RTA based junction has a limitation in viewpoint of Rs-Xj trade-off. Laser-only annealing is promising candidate to overcome this limitation. Boron diffusion with laser-only annealing is investigated. As atomistic kinetic Monte Carlo modeling show that BnIm complexes and End-of-Range (EOR) defects are formed during sub-millisecond annealing time range. Impact of F co-implant on Boron diffusion and EOR defect evolution during sub-millisecond annealing are also investigated.

Boron diffusion and defect evolution during sub-millisecond (ms) laser annealing with partial SPER are investigated using secondary ion mass spectrometry and transmission electron microscopy. Boron diffusivity enhancement in amorphous-Si is observed during partial SPER at 550 °C. It is shown that boron diffusion during the laser annealing process is a 2-step diffusion (SPER + Laser). The depth of the amorphous layer affects the dopant activation behavior. During sub-ms laser annealing, end-of-range defects are formed and show an evolution behavior. {311} defects cannot completely transfer to dislocation loops after 1300 °C laser annealing. It is considered that the thermal budget of sub-ms laser is too small for full defect evolution. Atomistic diffusion modeling using a kinetic Monte Carlo method can explain the defect behavior during laser annealing.

The advantages of fluorine co-implantation on reducing the deep P junction profile is investigated and commented as a possible valuable solution for further scaling of the NMOS transistors spacer length. On PMOS transistors, Ge+C+B cocktail junctions lead to improved short channel effects control, S/D resistance and performance over the conventional approaches. Additional laser annealing induces a partial dissolution of the doping clusters in the junction and lower the S/D transistors resistance. A performance improvement is demonstrated both for NMOS and PMOS with cocktail junctions activated by spike RTA and additional laser annealing.