Laser–plasma interaction and hot electrons have been characterized in detail in laser irradiation conditions relevant for direct-drive inertial confinement fusion. The experiment was carried out at the Gekko XII laser facility in multibeam planar target geometry at an intensity of approximately $3\times {10}^{15}$ W/cm2. Experimental data suggest that high-energy electrons, with temperatures of 20–50 keV and conversion efficiencies of $\eta <1\%$, were mainly produced by the damping of electron plasma waves driven by two-plasmon decay (TPD). Stimulated Raman scattering (SRS) is observed in a near-threshold growth regime, producing a reflectivity of approximately $0.01\%$, and is well described by an analytical model accounting for the convective growth in independent speckles. The experiment reveals that both TPD and SRS are collectively driven by multiple beams, resulting in a more vigorous growth than that driven by single-beam laser intensity.

Although maternal pre-pregnancy body mass index (BMI) and gestational weight gain (GWG) are related to fetal growth, there is a paucity of data regarding how offspring sex affects the relationship between maternal BMI in underweight mothers (pre-pregnancy BMI <18.5 kg/m2) and size for gestational age at birth. The aim of this study was to investigate the effect of offspring sex on the relationships among maternal pre-pregnancy BMI, GWG and size for gestational age at birth in Japanese underweight mothers. Records of women with full-term pregnancies who underwent perinatal care at Kawasaki Municipal Hospital (Kawasaki, Japan) between January 2013 and December 2017 were retrospectively reviewed. The study cohort included underweight (n=566) and normal-weight women (18.5 kg/m2⩽pre-pregnancy BMI<25 kg/m2; n=2671). The incidence of small for gestational age (SGA) births in the underweight group was significantly higher than that in the normal-weight group (P<0.01). Additionally, SGA incidence in the underweight group was significantly higher than that in the normal-weight group (P<0.01) in female, but not male (P=0.30) neonates. In the women with female neonates, pre-pregnancy underweight was associated with a significantly increased probability of SGA (odds ratio [OR]: 1.80; P<0.01), but inadequate GWG was not (OR: 1.38; P=0.11). In contrast, in women with male neonates, inadequate GWG was associated with a significantly increased probability of SGA (OR: 1.53; P=0.03), but not with pre-pregnancy underweight (OR: 1.30; P=0.10). In conclusion, the present results suggest that pre-pregnancy underweight is associated with SGA in female offspring but not in male offspring.

Metal abundances of the hot X-ray emitting interstellar medium (ISM) include important information to understand the history of star formation and evolution of galaxies. The metals are mainly synthesized by Type Ia (SNe Ia) and stellar mass loss in elliptical galaxies. The productions of stellar mass loss reflect stellar metallicity. SNe Ia mainly product Fe. Therefore, the abundance pattern of ISM can play key role to investigate the metal enrichment history.

The High Energy Transient Explorer 2 is a small scientific satellite designed to detect and localize gamma-ray bursts (GRBs). The coordinates of GRBs detected by HETE-2 will be distributed to interested ground-based observers within seconds of burst detection, thereby allowing detailed observations of the initial phases of GRBs. HETE-2 was launched successfully on October 9, 2000. The GRB positions will start to be delivered after a few months of the complete testing and calibration of the spacecraft system and the science instruments.

This paper describes the electrical and physical characteristics of ultrathin Jet Vapor Deposited (JVD) Silicon Oxynitride films. Capacitance-Voltage measurements indicate an equivalent oxide thickness (EOT) of less than 2 nm, taking into account the quantum-mechanical correction. These films have leakage currents almost two orders of magnitude lower than thermal oxide of the same equivalent thickness. Measurements on NMOSFETs with 0.15 μm of channel length demonstrate excellent electrical properties, including high drive currents (∼0.5 mA/μm @ Vd=Vg–Vt=l.5 V), low sub-threshold swings (∼72 mV/decade), and high transconductance (∼0.36 mS/μm @ Vd=1.5 V). These films were also analyzed using a variety of physicochemical methods, including Total X-ray Fluorescence (TXRF), Atomic Force Microscopy (AFM), Nuclear Reaction Analysis (NRA), Low Energy (500 eV) Secondary Ion Mass Spectrometry (SIMS), and Transmission Electron Microscopy (TEM). Surface metal concentrations of less than 1011 atoms/cm2 were measured from the TXRF analysis. The microroughness values for these films varied between 0.15 – 0.17 nm as measured by AFM. Low energy (500 eV) SIMS and NRA indicate high [N] near the top as well as throughout the bulk of the film, and a significant amount of [O] near the top of the film. High Resolution TEM pictures show a very uniform film with a physical thickness of 2.8 ± 0.1 nM, which yields an effective dielectric constant of 5.5, consistent with these types of oxynitride films.

A design-of-experiments methodology was implemented to assess the commercial equipment viability to fabricate the high-K dielectrics Ta2O5, TiO2 and BST (70/30 and 50/50 compositions) for use as gate dielectrics. The high-K dielectrics were annealed in 100% or 10% O2 for different times and temperatures in conjunction with a previously prepared NH3 nitrided or 14N implanted silicon surface. Five metal electrode configurations—Ta, TaN, W, WN and TiN—were concurrently examined. Three additional silicon surface configurations were explored in conjunction with a more in-depth set of time and temperature anneals for Ta2O5. Electrical characterization of capacitors fabricated with the above high-K gate dielectrics, as well as SIMS and TEM analysis, indicate that the post high-K deposition annealing temperature was the most significant variable impacting the leakage current density, although there was minimal influence on the capacitance. Further studies are required, however, to clarify the physical mechanisms underlying the electrical data presented.

As MOSFET dimensions are aggressively scaled, minimizing the thermal budget becomes critical for limiting the diffusion of channel profiles. Unfortunately, high quality dielectrics with low deposition temperatures have not been readily available. Typical room temperature dielectrics are porous and electrically leaky. A promising technique for low temperature dielectric deposition is Jet Vapor Deposition (JVD). [1] Two coaxial quartz nozzles spray the process gases to the substrate surface at super-sonic speeds while a microwave cavity generates a plasma in the nozzle. [2] We have successfully deposited silicon nitride films using SiH4/He and N2/He gas mixtures. These are the first reported JVD results on 200 mm wafers.

Ferroelectric thin films of the lead zirconate titanate family have been integrated with silicon-based micromachined structures in the fabrication of microelectromechanical devices. Sol-gel deposition techniques have been applied in the formation of ferroelectric thin films with high piezoelectric and pyroelectric coefficients for physical forces sensors and infrared detectors, respectively. Knowledge of both electrical and mechanical properties is important in realizing microelectromechanical devices with predictable performance. This pape reports piezoelectric coefficient, pyroelectric coefficient, dielectric constant, and Young's modulus for lead zirconate titanate and lead titanate thin films.

Ferroelectric thin films have been deposited on polycrystalline silicon micromechanical structures to form both physical microsensors and microactuator devices. These devices which include acoustic pressure sensors, infrared detectors, micropositioners, and stepper motors are based on either the piezoelectric or pyroelectric properties of sol-gel Pb(ZrxTi1-x)O3 or PbTiO3 deposited on surface-machined microelectromechanical structures. Several materials, micromachining, process integration, and performance issues are introduced in the description of these devices.

Crack free transparent ferroelectric PLZT (9/65/35) thin films were deposited on silicon substrates using the sol-gel deposition technique. An intermediate layer of PLT was used to improve the PLZT's optical quality and to reduce the amount of film cracking. Wet chemical, plasma and reactive ion etching are investigated as means of realizing the necessary waveguide structures. Waveguiding is observed in 2-4mm long PLZT (9/65/35) fabricated by reactive ion beam etching.