7 results
Temperature induced degradation of InAlGaN multiple-quantum well UV-B LEDs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1792 / 2015
- Published online by Cambridge University Press:
- 12 May 2015, mrss15-2102646
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- 2015
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On the dynamics of InGaN dot formation by RF-MBE growth
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E2.2
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- 2004
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Removal of 6H-SiC substrate influence when evaluating GaN thin film properties via x-ray
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I3.51.1
- Print publication:
- 2001
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Surface Instability and Associated Roughness of Pendeo-epitaxy GaN (0001) Films Grown via Metalorganic Vapor Phase Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I3.11.1
- Print publication:
- 2001
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Helical-Type Surface Defects in GaN and InGaN Thin Films Epitaxially Grown on GaN Templates at Reduced Temperatures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I9.7.1
- Print publication:
- 2001
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Thermal expansion of GaN at low temperatures - a comparison of bulk and homo- and heteroepitaxial layers
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 391-397
- Print publication:
- 2000
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Thermal Expansion of GaN at Low Temperatures - a Comparison of Bulk and Homo- and Heteroepitaxial Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W5.7
- Print publication:
- 1999
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