To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure email@example.com
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
Silicon germanium (SiGe) is considered to substitute silicon (Si) as channel material of p-type MOSFET in future CMOS generations due to its higher hole mobility. In this work we investigate SiGe channels with a germanium concentration of 23 at% and 30 at%, even though the mobility is expected to be higher with even more germanium in the alloy. Low pressure chemical vapor deposition was used for SiGe deposition. A state of the art CMOS process including high-k dielectric and metal gate electrode was applied for fabrication of sub 50 nm gate length devices. As expected from the SiGe channel conduction and valence band offset the threshold voltage of the devices is influenced. The gate stack was directly deposited onto the SiGe layer consisting of a chemically grown base oxide, hafnium-based dielectric and titanium nitride gate electrode. C-V and I-V measurements show comparable CET and leakage values for the high-k metal gate stack on Si and SiGe channels. The trap density at the channel dielectric interface was determined using the charge pumping technique. The device characteristics of n- and p-MOSFETs with SiGe channels are compared to conventional Si channel devices. Short channel mobility was extracted with the gM,LIN-Method.
Email your librarian or administrator to recommend adding this to your organisation's collection.