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Structure and chemistry across the rare earth oxide-Ge interfaces of a Gd2O3-Ge-Gd2O3 heterostructure grown on p-Si (111) substrate using encapsulated solid phase epitaxy method have been studied at nanoscale using various transmission electron microscopy methods. The structure across both the interfaces was investigated using reconstructed phase and amplitude at exit plane. Chemistry across the interfaces was explored using elemental mapping, high-angle annular dark-field imaging, electron energy loss spectroscopy, and energy dispersive X-ray spectrometry. Results demonstrate the structural and chemical abruptness of both the interfaces, which is most essential to maintain the desired quantum barrier structure.
A homogeneously mixed phase of carbon and 10% nickel yielding amorphous carbon-nickel composite (a-C-Ni) films is prepared by an excimer UV pulsed laser ablation. Conductivity study of these films shows a nearly activated conduction. Also a saturation of conductivity below a temperature of 25 K explains the presence of an additional density of states at the Fermi level in these samples. Our experiments demonstrate a very different behaviour of electronic properties of these novel materials compared to undoped diamond-like carbon (DLC) films, which was directly confirmed using valence band spectroscopy.
Amorphous 1–2-nm-wide intergranular films in ceramics dictate
many of their properties. The detailed investigation of structure and
chemistry of these films pushes the limits of today's transmission
electron microscopy. We report on the reconstruction of the
one-dimensional potential profile across the film from an experimentally
acquired tilt series of energy-filtered electron diffraction patterns.
Along with the potential profile, the specimen thickness, film orientation
with respect to the grain lattice and specimen surface, and the absolute
specimen orientation with respect to the laboratory frame of reference are
Conducting carbon films are irradiated by high energy ion beam and persistent photoconductivity has been found from the irradiated samples. A complex distribution of traps created mostly by random displacement of carbon atoms by energetic ion beam from its polymeric matrix showed a persistent photoconductivity at low temperatures down to 50K. From the photo decay constants and the magnitude of photocurrent the density of traps and the corresponding activation energies have been calculated.
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