3 results
An Analysis of Static and Dynamic Characteristics of 12kV 4H-SiC n-IGBT using HfO2-SiO2 Dielectric Stack at High Temperatures
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- Journal:
- MRS Advances / Volume 3 / Issue 59 / 2018
- Published online by Cambridge University Press:
- 03 May 2018, pp. 3433-3438
- Print publication:
- 2018
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- Article
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Silicon carbide nanowires grown on 4H-SiC substrates by chemical vapor deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1178 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1178-AA03-06
- Print publication:
- 2009
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- Article
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Factors Influencing the Growth Rate, Doping, and Surface Morphology of the Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H SiC with HCl Additive
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1069 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1069-D05-03
- Print publication:
- 2008
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- Article
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