To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure firstname.lastname@example.org
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
A crucial target in the printed electronics technologies is to realize all-printed thin-film transistors (TFTs), as being applicable to the industry. Here, the authors report printed polymer TFTs through the integration of the SuPR-NaP technique, a promising way for manufacturing ultrafine printed silver electrodes, with printed polymer semiconductor layers. The authors used a class of donor–acceptor-type copolymer, PDVT-10, and found that the devices exhibit excellent TFT characteristics. The devices allow the transfer length method measurements with high accuracy, where the estimated contact resistance is considerably small (4.7 kΩ cm) among the bottom-contact TFTs using printed silver electrodes, with also showing short-channel effects.
7-Decyl-2-phenylbenzothieno[3,2-b]benzothiophene (Ph-BTBT-C10) is a soluble organic semiconductor that can afford high mobility organic thin-film transistors (OTFTs). The material exhibits inherent high layered crystallinity due to the formation of bilayer-type layered-herringbone packing that involves nearly independent π-electron core layers and alkyl-chain layers within the crystals. Here, we discuss that the bottom-gate/top-contact OTFTs composed of single-crystalline Ph-BTBT-C10 channel layers exhibit noticeable effects in the device characteristics caused by the highly insulating nature of the alkyl-chain layers. Notable layer-number (n) dependence was observed in the nonlinear current–voltage characteristics and the device mobility (2–14 cm2/Vs, with TFT ideality factor 15–46%, mainly due to large threshold voltages), which can be clearly ascribed to the tunneling-based interlayer access resistance across the alkyl-chain layers. The gated-four-probe measurements of single-crystalline OTFTs also revealed quite high mobility more than 40 cm2/Vs along the channel semiconducting layer, whereas highly insulating effects due to the alkyl-chain layers were also apparent as the large hysteresis in the gate-off states of OTFTs. We discuss the whole features of the tunneling-based access resistance in the device operations of single-crystalline OTFTs, on the basis of comparison between experimental results and model simulations.
Email your librarian or administrator to recommend adding this to your organisation's collection.