To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure firstname.lastname@example.org
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
The paper reports on the growth of group III-Sb’s on silicon, substrate preparation, optimization of AlGaSb metamorphic buffer, formation of defects (threading dislocations, microtwins and anti-phase boundaries) and their effect on the surface morphology and electrical properties of these high hole mobility materials for future III-V CMOS technology. Defect density was found to be 2-3x higher than in similar structures grown on GaAs, resulting in 2x higher roughness. Defects also result in background p-type doping well above 1017 cm-3 causing inversion of polarity from n-type to p-type in thin n-type doped GaSb. MOS Capacitors fabricated on these buffers demonstrate similar characteristics to higher quality GaSb-on-GaAs. The highest hole mobility obtained in a strained InGaSb QW MOS channel grown on silicon is ∼630 cm2/V-s which is ∼30% lower than similar channels grown on GaAs substrates.
Email your librarian or administrator to recommend adding this to your organisation's collection.