This paper focuses on establishing a baseline for thin dielectric processes including: low temperature, dilute, stacked (TEOS), oxynitride, and high temperature annealed (grow‐anneal‐grow) oxidation. 105Å (total thickness) gate dielectrics were grown or deposited for this study. The stack oxide showed the highest Vbd yields for both large‐area and edge‐intensive capacitors, but the poorest Qbd. The N2O oxide yielded mediocre Vbd and Qbd. The low temperature and dilute oxides showed early breakdowns, but acceptable Qbd. 900°C thermal gate oxide showed slightly better average Vbd than low temperature and dilute oxides but comparable Qbd. The high temperature annealed oxide appears to have the best electrical performance, but the worst uniformity.