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In situ Study of Strain Relaxation Mechanisms During Lattice-mismatched InGaAs/GaAs Growth by X-ray Reciprocal Space Mapping
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1268 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1268-EE06-02
- Print publication:
- 2010
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- Article
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