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The oxidation behavior of Cu50Zr50 and Cu46Zr46Al8 glasses during continuous heating up to 1073 K has been investigated, with special emphasis on the oxidation resistance in the supercooled liquid (SCL) state. For Cu50Zr50, the oxide layer mostly consists of monoclinic ZrO2 (m-ZrO2), while for Cu46Zr46Al8, the oxide layer consists of two different layers: an outer layer consisting of tetragonal ZrO2 (t-ZrO2) + Al2O3 + metallic Cu (oxidation product from the SCL state of the glass matrix) and inner layer comprised of m-ZrO2 + metallic Cu islands (oxidation product from the crystallized matrix). Cu-enriched regions consisting of Cu51Zr14 (in Cu50Zr50) or AlCu2Zr + Cu70Zr15Al15 + Cu51Zr14 (in Cu46Zr46Al8) are present below the oxide layer. The present study shows that the addition of Al (8 at.%) in Cu50Zr50 results in a significant deterioration of the oxidation resistance in the SCL state since the solutionizing of Al in t-ZrO2 leads to a higher oxygen ion vacancy concentration, thus providing a higher activity of oxygen ions.
Recently, low molecular organic non-volatile memories have been developed as a next generation of non-volatile memory because of nano-meter device-feature size and nano-second access and store-time. We developed a non-volatile memory fabricated with the device structure of Al/ α-NPD/Al nano-crystals surrounded by Al2O3/α-NPD/Al, where α-NPD is N,N'-bis(1-naphthyl)-1,1'biphenyl4-4”diamine. One layer of Al nano-crystals with ∼20 nm-width ∼20 nm length was uniform produced between α-NPD layers, confirmed by 1.2MV high voltage transmission-electron-microscope. This device showed Vth of 3.0 V, Vprogram of 4.3 V, and Verase of 6.3 V. Particularly, this device exhibited an excellent non-volatile memory behavior performing the bi-stability (Iprogrm/Ierase) of >1×102, program/erase cycles of >1×105 and multi-levels. In addition, previous reports about low molecular organic non-volatile memories have showed a bad reproducible memory characteristic. However, this issue was completely solved via isolating Al nano-crystals embedded in α-NPD by O2 plasma oxidation. The uniformity of Vth, Vp, and Ve were 9.91%, 6.94% and 7.92%, respectively. Furthermore, the effect of buffer or barrier layer on non-volatile memory characteristics was investigate to examine the control ability for Vth, Vp, and Ve. The 0.5-nm LiF showed a barrier layer behavior suppressing the bi-stability of non-volatile memory. Otherwise, 15-nm CuPc exhibited a buffer layer behavior enhancing the bi-stability of nonvolatile memory.
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