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Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode
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- Journal:
- The European Physical Journal - Applied Physics / Volume 55 / Issue 3 / September 2011
- Published online by Cambridge University Press:
- 18 August 2011, 30101
- Print publication:
- September 2011
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- Article
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