14 results
Comparative study of HVPE- and MOCVD-grown nitride structures for UV lasing application
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G6.4
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- 2000
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Microstructure-based lasing in GaN/AlGaN separate confinement heterostructures
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 661-667
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- 2000
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Comparison Study of Structural and Optical Properties of InxGa1−xN/GaN Quantum Wells with Different In Compositions
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 977-983
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- 2000
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Amplification Path Length Dependence Studies of Stimulated Emission from Optically Pumped InGaN/GaN Multiple Quantum Wells
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 757-762
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- 1999
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Influence of Si-Doping on Carrier Localization of Mocvd-grown InGaN/GaN Multiple Quantum Wells
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 715-720
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- 1999
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Comparison Study of Structural and Optical Properties of InxGa1-xN/GaN Quantum Wells with Different in Compositions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W12.7
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- 1999
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Study of Near-Threshold Gain Mechanisms in MOCVD-Grown GaN Epilayers and InGaN/GaN Heterostructures
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- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 439
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- 1999
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Microstructure-Based Lasing in GaN/AlGaN Separate Confinement Heterostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.22
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- 1999
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Comparative Study of Emission from Highly Excited (In, Al) GaN Thin Films and Heterostructures
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- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 351
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- 1999
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Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 739-744
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- 1999
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Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
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- 15 February 2011, G6.48
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- 1998
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Influence of Si-Doping on Carrier Localization of Mocvd-Grown InGaN/GaN Multiple Quantum Wells
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.44
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- 1998
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Study of Stimulated Emission in InGaN/GaN Multi-Quantum Wells in the Temperature Range of 175 k to 575 k
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- Journal:
- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 199
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- 1998
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Amplification Path Length Dependence Studies of Stimulated Emission from Optically Pumped InGaN/GaN Multiple Quantum Wells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.54
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- 1998
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