3 results
Implanted Bipolar Technology in 4H-SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T1.7.1
- Print publication:
- 2000
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Physical Characterization of Residual Implant Damage in 4H-SiC Double Implanted Bipolar Technology
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H5.30
- Print publication:
- 2000
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The Effect of Annealing on Argon Implanted Edge Terminations for 4H-SiC Schottky Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 129
- Print publication:
- 1999
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