Raman study of as-grown and H2O2-etched surfaces of Zn0.1Cd0.9 Te single crystal has been performed. A distribution of Te precipitates on the surface of as-grown ZCT, which increases after etching, has been encountered. With high irradiation powers, due to the oxidation of the surfaces, new bands of TeO32− are evolved. A downward shift in the peak position, as well as a halfwidth broadening, of all Raman modes has been observed with increasing laser power. The phenomenon, due to the formation of insulating oxide of tellurium in a dispersion of Te precipitates and vice-versa, has been attributed to the quantum confinement of phonons.