Density multiplication of patterned templates by directed self-assembly (DSA) of block copolymers (BCP) stands out as a promising alternative to overcome the limitation of conventional lithography. Using the 300mm pilot line available in LETI and Arkema’s materials, the main objective is to integrate DSA directly into the conventional CMOS lithography process in order to achieve high resolution and pattern density multiplication at a low cost. Thus we investigate the potential of DSA to address contact and via level patterning by performing either CD shrink or contact multiplication. Our approach is based on the graphoepitaxy of PS-b-PMMA block copolymers. Lithographic performances of block copolymers are evaluated both for contact shrink and contact doubling. Furthermore, advanced characterization technics are used to monitor in-film self-assembly process. These results show that DSA has a high potential to be integrated directly into the conventional CMOS lithography process in order to achieve high resolution contact holes.

In this paper, we have performed further investigations and deepened our understanding of Polymer Resistive Random Access Memory devices (PoRRAM) on silicon substrate. Organic thin films based on blend of fullerene (C60) molecules and poly-methyl-methacrylate resist (PMMA) were analyzed from a material and electrical point of views. We have enlightened first the necessity of thermal treatment on the nano-composite layer in order to obtain memory effect in the device. Indeed from I-V measurements, only devices that had a thermal activation exhibited the hysteresis phenomenon, characteristic of the memory effect. The impact of thermal annealing has been investigated by morphological analysis (AFM and confocal microscopy) before and after thermal treatment. This process step induced the C60 molecules aggregation in the polymer matrix. The morphological study of these aggregates coupled with electrical measurements allowed us to determine the influence of aggregation on the electrical behavior. Due to their flexibility, this organic memories based on PMMA:C60 nanocomposites show a strong potential for an adaptation on plastic substrate.

In this paper, fabrication of nanocomposite thin films with introduction of fullerene (C60) molecules in PolyMethyl MethAcrylate resist (PMMA) was investigated from a material and electrical point of view. The effective inclusion of C60 molecules in the samples was characterized by using UV-vis and Tof-SIMS instruments. The modified resist PMMA:C60 was also studied with Thermal analysis (TGA, DSC) where modification of physical properties is reported. Films were included in MIS and MIM devices and results on non volatile trapping of C60 doped PMMA are presented. Moreover, e-beam exposure tests showed that PMMA:C60 active layers for memory devices, were scalable in size.