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A technology of anisotropic etching of GaAs (100) samples with two
different types of geometric disorder (dendrite, quasi-grating) has been
elaborated. The geometric statistical parameters of micro(nano)relief
were investigated using bearing analysis. The measurements of the radii
of curvature have shown that the samples were rather deformed,
with nonuniform strain lateral distribution over the wafer areas.
The radii of curvature were different for different samples, depending
on surface treatment. The X-ray diffraction data indicate that the
subsurface region of anisotropically etched GaAs crystal and epitaxial
films grown on such substrates are not worse than those of a crystal with
smooth chemically polished surface. Geometric disorder of such surfaces
leads to enhancement of the diffuse contributions on the rocking
We investigated the effect of microwave radiation on the physico-chemical properties of some semiconductor materials (CdxHgl-xTe, GaAs) and metal (Al, Pt, Cr, Mo, W) - GaAs Schottky barrier diode structures. From comparison with the results of the other treatments (heat annealing, g-irradiation) some suggestions are made concerning possible mechanisms of the interaction between microwave radiation and the objects studied.
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