Multiwafer Planetary Reactor is a promising system for large-scale production of heterostructures for LED's based on III-group nitrides. Analysis of chemical processes occurring in the reactor allows one to get insight into specific mechanisms governing growth of nitride based heterostructures. In the present paper results of modeling analysis of MOVPE of InxGa1−xN layers in AIX-200 Reactor and AIX 2000 HT Planetary Reactor are reported. The model used for MOVPE process analysis accounts for gas flow, heat transfer, and multicomponent mass transport along with gas phase and surface chemical reactions. Results of the modeling analysis of In transport and incorporation into the solid phase are compared with experimental data. It is shown that the model predicts reasonably well the In incorporation during MOVPE of InGaN under In/(In+Ga) ratio in the gas phase less than 20%.