Over the years, face recognition has been the research topic that has attracted many researchers around the world. One of the most significant applications of face recognition is the access control system. The access control system allows authorized persons to enter or exit certain or restricted areas. As a result, it will increase the security situation without over-investment in staff security. The access information can be the identification, time, and location, etc. It can be used to carry out human resource management tasks such as attendance and inspection of employees in a more fair and transparent manner. Although face recognition has been widely used in access control systems because of its better accuracy and convenience without requiring too much user cooperation, the 2D-based face recognition systems also retain many limitations due to the variations in pose and illumination. By analyzing facial geometries, 3D facial recognition systems can theoretically overcome the disadvantages of prior 2D methods and improve robustness in different working conditions. In this paper, we propose the 3D facial recognition algorithm for use in an access control system. The proposed algorithm includes the preprocessing, feature extraction, and classification stages. The application of the proposed access control system is the automatic sliding door, the controller of the system, the web-based monitoring, control, and storage of data.

Silicon nitride thin films used for transistor spacer are usually under large tensile residual stresses. When a film is thick enough, it can crack by channel cracking mechanism. The toughness of these films, used in models for failure criteria, can be obtained by determining the critical thickness for channel cracking of blanket films with known residual stresses. However, depositing films of a range of different thickness to determine the critical thickness is tedious, and this process also introduces risks of producing particles in the deposition chamber when the film exceeds the critical thickness. An alternative technique is to deposit films of thickness below critical thickness and then to apply additional tensile stresses to the film by bending the substrate. A critical film stress can be determined for channel cracking from which the film toughness is obtained. This paper describes the experiments performed for a new SiN film and presents the results.

Moisture can cause a host of reliability problems at interfaces including interface debonding. Two mechanisms can be identified. First, moisture at an interface can reduce the interface bonding strength dramatically by altering the chemical bonds. Second, when an interface with a crack or a crack-like defect is under tensile stresses, stress corrosion may allow crack growth at stresses much lower than critical fracture would require. To avoid wet interfaces, wafers should be briefly baked or exposed to a plasma in situ before the next film deposition step. However, moisture can also reach interfaces by diffusion along interfaces from unprotected edges during a wet process, such as CMP, or during storage in the ambient. In this work, the effect of moisture induced interface strength reduction was utilized to determine the diffusion distance. By using a mechanical peel technique, the diffusivity of moisture along the interface between Al and a poly(arylene ether) based low-K material (PAE2) was measured to be 4–6 μm2/s. Stress corrosion was studied using a special 4-point bend technique so that both strain energy release rate and crack velocity can be obtained. It was found that the mechanism of stress corrosion at this interface is more complicated compared to that in a bulk material: while the chemical reaction took place at the crack tip, moisture diffusion was also occurring along the interface ahead of the crack tip, preconditioning the interface. There appeared to be a region that kinetics was limited by interfacial moisture diffusion and reaction, from which the reaction time for interface weakening was estimated to be ∼ 10 seconds. It was also found that even for samples saturated with moisture, the relative humidity of the test environment was still very important.