To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure email@example.com
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
For CdTe there is no real distinction between defects and impurities exists when non-shallow dopants are used. These dopants act as beneficial impurities or detrimental carrier trapping centers. Unlike Si, the common assumption that the trap energy level Et is around the middle of the band-gap Ei, is not valid for thin film CdTe. Trap energy levels in CdTe band-gap can distributed with wide range of energy levels above EF. To identify the real role of traps and dopants that limit the solar cell efficiency, a series of samples were investigated in thin film n+-CdS/p-CdTe solar cell, made with evaporated Cu as a primary back contact. It is well known that process temperatures and defect distribution are highly related. This work investigates these shallow level impurities by using temperature dependent current-voltage (I-V-T) and temperature dependent capacitance-voltage (C-V-T) measurements. I-V-T and C-V-T measurements indicate that a large concentration of defects is located in the depletion region. It further suggests that while modest amounts of Cu enhance the cell performance by improving the back contact to CdTe, the high temperature (greater than ∼100°C) process condition degrade device quality and reduce the solar cell efficiency. This is possibly because of the well-established Cu diffusion from the back contact into CdTe. Hence, measurements were performed at lower temperatures (T = 150K to 350K). The observed traps are due to the thermal ionization of impurity centers located in the depletion region of p-CdTe/n+-CdS junction. For our n+-CdS/p-CdTe thin film solar cells, hole traps were observed that are verified by both the measurement techniques. These levels are identical to the observed trap levels by other characterization techniques.
Email your librarian or administrator to recommend adding this to your organisation's collection.