14 results
Development of the Nitride Laser Diode Arrays for Video and Movie Projectors
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- Journal:
- MRS Advances / Volume 1 / Issue 2 / 2016
- Published online by Cambridge University Press:
- 15 February 2016, pp. 103-108
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- 2016
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InGaN Laser Diode Degradation. Surface and Bulk Processes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1195 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1195-B01-04
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- 2009
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Low dislocation density, high power InGaN laser diodes
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 9 / 2004
- Published online by Cambridge University Press:
- 13 June 2014, e3
- Print publication:
- 2004
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Light emitters fabricated on bulk GaN substrates. Challenges and achievements.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I4.7.1
- Print publication:
- 2001
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The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1−xN quantum wells
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue 1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, e1
- Print publication:
- 2000
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The influence of the sapphire substrate on the temperature dependence of the GaN bandgap
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 289
- Print publication:
- 1999
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The Magnitude of the Piezoelectric Effect in InGaN Quantum Wells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 187
- Print publication:
- 1998
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High-pressure investigation of InGan quantum wells.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 399
- Print publication:
- 1998
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Effect of internal absorption on cathodoluminescence from GaN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e4
- Print publication:
- 1998
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Cubic Inn Inclusions as the Cause for the Unusually Weak Pressure Shift of the Luminescence in InGaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 697
- Print publication:
- 1997
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Optical and Electrical Characteristics of Single-Quantum-Well InGaN Light-Emitting Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 1173
- Print publication:
- 1996
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Spatial distribution of electron concentration and strain in bulk GaN single crystals - relation to growth mechanism
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 519
- Print publication:
- 1996
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Degradation of Single-Quantum Well InGaN Green Light Emitting Diodes Under High Electrical Stress
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 1179
- Print publication:
- 1996
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Electrical Properties of Nichia AlGaN/InGaN/GaN Blue LEDs in a Wide Current/Temperature Range
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 937
- Print publication:
- 1995
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