5 results
Hydrogen passivation of vacancies in diamond: Electronic structure and stability from ab initio calculations
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- Journal:
- MRS Advances / Volume 2 / Issue 5 / 2017
- Published online by Cambridge University Press:
- 24 January 2017, pp. 309-314
- Print publication:
- 2017
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Electronic Structure and Transport Properties of Doped Lead Chalcogenides from First Principles
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- Journal:
- MRS Advances / Volume 1 / Issue 60 / 2016
- Published online by Cambridge University Press:
- 14 August 2016, pp. 4003-4010
- Print publication:
- 2016
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Electronic Structure and N-Type Doping in Diamond from First Principles
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- Journal:
- MRS Advances / Volume 1 / Issue 16 / 2016
- Published online by Cambridge University Press:
- 01 February 2016, pp. 1093-1098
- Print publication:
- 2016
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A Comparison of Intrinsic Point Defect Properties in Si and Ge
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1070 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1070-E06-05
- Print publication:
- 2008
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Simulation of Vacancy Cluster Formation and Binding Energies in Single Crystal Germanium
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- Journal:
- MRS Online Proceedings Library Archive / Volume 994 / 2007
- Published online by Cambridge University Press:
- 21 April 2011, 0994-F03-08
- Print publication:
- 2007
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