The formation of massive stars remains one of the most intriguing questions in astrophysics today. The main limitations result from the difficulty to obtain direct observational constraints on the formation process itself. In this context, the Carina High-contrast Imaging Project of massive Stars (CHIPS) aims to observe all 80+ O stars in the Carina nebula using the new VLT 2nd-generation extreme-AO instrument SPHERE. This instrument offers unprecedented imaging contrast allowing us to detect the faintest companions around massive stars. These novel observational constraints will help to discriminate between the different formation scenarios by comparing their predictions for companion statistics and properties.

We discuss the principles of Optical interconnects, and discuss the potential of silicon photonics to provide all the necessary building blocks to construct dense, high-bandwidth, lowpower optical links. We discuss waveguides, wavelength division multiplexing, modulators and photodetectors. We also take a look at the options for implementing light sources, a function which silicon cannot natively provide, with a focus on implementations in the IMEC silicon photonics platform.

As extensions have been up till now always used in N-MOS transistors with an activation anneal. Here, we show that also alternative doping by P can result in junction extensions that are extremely abrupt and shallow thus suitable for upcoming transistor technologies. P extensions are manufactured by amorphization, carbon co-implantation and conventional rapid thermal annealing (RTA). The impact of Si interstitials (Sii) flux suppression on the formation of P junction extensions during RTA is demonstrated. We have concluded that optimization of implants followed by RTA spike offers excellent extensions with depth Xj = 20 nm (taken at 5 × 1018 at./cm3), abruptness 3 nm/dec. and Rs = 326 Ω. Successful implementation of these junctions is straightforward for N-MOS devices with 30 nm gate length and results in an improved short channel effects with respect to the As reference.

We present B junction extensions that are extremely abrupt and shallow manufactured by amorphization, C co-implantation and conventional rapid thermal annealing (RTA). Resulting junctions have abruptnesses of 2 nm/dec better than as-implanted profiles. The most shallow B junction that has been manufactured is 15 nm deep and Rs = 626 Ω/sq. Successful implementation of these junctions is straightforward for P-MOS 30 nm gate length devices.