The redistribution of nitrogen from silicon to the Si-SiO2 interface due to thermal processing is investigated by Secondary Ion Mass Spectroscopy (SIMS) using Metal-Oxide-Semiconductor (MOS) capacitors. SIMS profiles of implanted atomic nitrogen concentration indicate a significant redistribution of the nitrogen, from the silicon to the oxide layer in response to variations of the steady state time and temperature parameters of Rapid Thermal Anneal (RTA) processing. RTA treatment, in N2 ambient, over a temperature range of 750°C - 1100°C, results in a measured increase of the integrated nitrogen peak at the interface. High Frequency Capacitance Voltage (HFCV) measurements of an implanted (N/ 5 × 1014 cm2/s / 26keV) and annealed (900°C / 10s) sample is compared with a control (without N implant) sample to determine the relative nitrogen abundance at the interface. This value corresponds to the increase in fixed oxide charge Q that produces a negative shift in the flat band voltage Vo under negative gate bias conditions.

Traditional Catholic apologetics is currently experiencing a revival in U.S. Catholic thought. Modeled in part on the apologetics of the preconciliar Catholic Literary Revival, the new Catholic apologetics draws strategically from the intellectual world of the pre-Vatican II church. Responsive to the conditions of postconciliar Catholicism and later-twentieth-century U.S. culture, the new apologists also exploit the resources of contemporary popular culture to advance a critique of secular society and the status quo in American Catholic life. While defending traditional Catholic doctrine, the new generation of apologists has contributed to the creation of a novel form of American Catholicism—technologically sophisticated, uniquely ecumenical, and aggressively separatist. Utilizing the lecture circuit, the print media, audio and video recordings, cable television, and the internet, the new apologists have made apologetics a vibrant industry of the conservative Catholic subculture in America.