Solar blind detectors based on AlGaN heterostructures grown on sapphire by
Molecular Beam Epitaxy and with a dielectric interference filter deposited
on the back side are demonstrated to provide record spectral selectivity.
Rejection ratios of 2 × 104, and better than 5 × 104,
measured between 280 and 320 nm, are achieved in Metal Semiconductor Metal
detectors and Schottky diodes respectively. The whole detector process is
fully compatible with low cost array fabrication.