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MOCVD Growth of Ga(Al)N/InGaN/Ga(Al)N-Heterostructures: Influence of the Buffer Layer Al-Concentration and Growth Duration on the In-Incorporation in InGaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 680 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, E3.6
- Print publication:
- 2001
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- Article
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