The stiffness of conjugated polymers should lead to chain alignment near buried interfaces, even if the polymer film is nominally amorphous. Although simulations predict that this alignment layer is approximately 1.5 times the persistence length, chain alignment at buried interfaces of amorphous polymers has not been experimentally measured. Using Mueller matrix spectroscopy, the optical response of regiorandom poly(3-hexylthiophene-2,5-diyl) (P3HT) was modeled in order to extract the aligned layer thickness. By approximating the optical properties of the aligned layer as that of regioregular P3HT, the data can be effectively modeled. When the film is thicker than 150 nm, optical properties are best described with a 4-nm aligned layer, which is quantitatively consistent with previous predictions.

Here, we report thiol-free thermal-injection synthesis of chalcopyrite (CuFeS2) nanocrystals (NCs) using iron (II) bromide (FeBr2), copper (II) acetaylacetonate (Cu(acac)2), and elemental sulfur (S). Controlled reaction temperature and growth time yield stable and phase-pure ternary CuFeS2 NCs exhibiting tetragonal crystal structure. With increasing growth time from 1 to 30 min, absorption peak slightly red shifts from 465 to 490 nm. Based on spectroscopic ellipsometry analysis, three electronic transitions at 0.652, 1.54, and 2.29 eV were found for CuFeS2 NC film. Also, CuFeS2 NC thin films are incorporated as hole transport layers in cadmium telluride solar cells reaching an efficiency of ~12%.

Phase diagrams have been established to describe very high frequency (vhf) plasma-enhanced chemical vapor deposition (PECVD) processes for intrinsic hydrogenated silicon (Si:H) and silicon-germanium alloy (Si1-xGex:H) thin films using crystalline Si substrates that have been over-deposited with n-type amorphous Si:H (a-Si:H). The Si:H and Si1-xGex:H processes are applied for the top and middle i-layers of triple-junction a-Si:H-based n-i-p solar cells fabricated at University of Toledo. Identical n/i cell structures were co-deposited on textured Ag/ZnO back-reflectors in order to correlate the phase diagram and the performance of single-junction solar cells, the latter completed through over-deposition of the p-layer and top contact. This study has reaffirmed that the highest efficiencies for a-Si:H and a-Si1-xGex:H solar cells are obtained when the i-layers are prepared under maximal H2 dilution conditions.

In this study, the amorphous-phase roughening transition thickness has been determined as a function of process variables in plasma-enhanced chemical vapor deposition (PECVD) of hydrogenated amorphous silicon-germanium alloys (a Si1-xGex:H). Among the process variables include the H2-dilution gas flow ratio, the alloying flow ratio, the electrode configuration (anode vs. cathode), and the He-dilution ratio. One clear feature of this study is a maximum in the amorphous roughening transition thickness (and hence surface stability) at a H2-dilution ratio just below the transition from amorphous to mixed-phase (amorphous+microcrystalline) (a+μc) growth. A second feature for high Ge content films is a significant increase in the roughening transition thickness for cathode PECVD (with a self-bias of ~ −20 V) relative to anode PECVD. Additional features of interest involve suppression of the mixed-phase transition to (a+μc) for (i) alloying with Ge, (ii) cathodic substrate biasing, and (iii) diluting the gas with He. The close correlation of high surface stability with enhanced short-range order and overall electronic performance has led to a simple model for the transition in terms of a competition between roughening due to the atomic size and smoothening due to precursor surface diffusion. It is proposed that diffusing precursors are immobilized by surface defects (or by other diffusing precursors), and the pre-existing (or resulting) defects are ultimately incorporated in the bulk.

We have applied an advanced model to analyze the dielectric functions e = e1 + ie2 of amorphous silicon-germanium alloys (a-Si1-xGex:H) (i) as a function of alloy content × by varying the flow ratio G = [GeH4]/{[SiH4]+[GeH4]} in plasma-enhanced chemical vapor deposition (PECVD), and (ii) for the first time as a function of the measurement temperature Tm by cooling the newly-deposited film. All e spectra (1.5 − 4.5 eV) have been measured by spectroscopic ellipsometry (SE) either in real time during deposition or in situ post-deposition in order to avoid surface contamination. From the resulting extensive database, the optical properties of the alloys can be predicted for any value × and Tm within the ranges of the database. Such a capability is expected to be useful, for example, in real time control of optical gap in the PECVD process and in predicting the quantum efficiency of multijunction a-Si:H-based solar cells versus operating temperature. The effect on the database of other deposition parameters such as the electrode configuration and the H2-dilution ratio R = [H2]/{[SiH4]+ [GeH4]} have also been explored. The latter two studies provide useful insights into materials properties that can be extracted from a single spectroscopic measurement performed in real time during PECVD. For example, the energy width of the resonance in e correlates closely with the precursor surface diffusion characteristics observed throughout growth -- both determined from real time SE. This result indicates that short-range ordering in the film is improved when surface diffusion is promoted.