This paper reports on the temperature dependent threshold voltage analysis of AlGaN/GaN High electron mobility transistors (HEMTs) in order to investigate the trap effects occurring in these devices. Measurements are performed in pulse configuration to emphasize the gate-lag and drain-lag effects involving current collapses. A quantitative extraction of the interface traps density is performed through the observation of the pinch-off voltage shifts in cold bias conditions. Additionally, a thermally activated energy level of 0.25 eV is evaluated whatever the bias condition. It is also shown that the trap density increases drastically when the drain is biased, limiting the performance of AlGaN/GaN devices through drain-lag effect.

Since the middle of the 90's, GaN epitaxy techniques have been developed, using either MOCVD or MBE growth methods. A low cost approach is presented aiming at satisfying thermal issues encountered on conventional substrates such as SiC, Sapphire and more recently Silicon. Domain of application are being covered with their associated challenges: RF and High Power applications. Stress engineering is one of the key parameters.