YBCO films prepared from metal trifluoroacetate (TFA) precursors on oxide-buffered textured non-magnetic substrates have achieved performance levels equaling that on oxide buffered textured Ni substrates. Critical current densities of 0.7 MA/cm2 to 1.0 MA/cm2 have been achieved in 0.4 µm thick YBCO films on short-length of CeO2/YSZ/Y2O3/Ni/Ni-13wt%Cr substrates. High-quality epitaxial buffers comprising a Ni layer, Y2O3 seed, YSZ barrier and CeO2 cap layers have been deposited over meter long tapes of deformation textured Ni and Ni-13%Cr using reel-to-reel processes. High-performance TFA-based YBCO films have been deposited on 0.1 m to 0.3 m lengths of these oxide buffered substrates using reel to reel processes. Critical current densities up to 1.0 MA/cm2 have been achieved in 0.4 µm thick YBCO films on CeO2/YSZ/Y2O3/Ni substrates. Using multiple coats of the metal trifluoroacetate precursors, thicker YBCO films have been demonstrated on oxide buffered substrates. Critical currents in excess of 100A/cm-width have been achieved for 1.2 µm -1.6 µm thick YBCO films on short lengths of CeO2/YSZ/Y2O3/Ni substrates.

Grooves have been etched photoelectrochemically into a (100) n-GaAs surface using a 100 cycle/mm grating mask to define the illuminated area. The degree of mask undercutting and the shape of the groove bottom are shown to be functions of doping density and crystallographic orientation. High doping density gives rise to reduced undercutting, presumably due to a lesser extent of surface diffusion of photogenerated holes.