Wide bandgap semiconductor films were obtained by spray pyrolysis, thermal evaporation and casting. These films were characterized under similar conditions in order to compare their structures, surface morphology and photocurrent properties. All films show either a crystalline or a polycrystalline structure. SEM pictures of sprayed films present holes and fissures and non-total covering of the substrate. The photoresponse was obtained for evaporated TlBr films, HgI2 casted with polystyrene (PS) scaffold, sprayed and evaporated PbI2 films. The photo to dark current ratio is discussed as well as the difference of photo to dark current at an electric field of 100 V/cm. The discussion also focuses on a future optimized material.