Skeletal muscle atrophy causes decreased physical activity and increased risk of metabolic diseases. We investigated the effects of oleamide (cis-9,10-octadecanamide) treatment on skeletal muscle health. The plasma concentration of endogenous oleamide was approximately 30 nm in male ddY mice under normal physiological conditions. When the stable isotope-labelled oleamide was orally administered to male ddY mice (50 mg/kg), the plasma concentration of exogenous oleamide reached approximately 170 nm after 1 h. Male ddY mice were housed in small cages (one-sixth of normal size) to enforce sedentary behaviour and orally administered oleamide (50 mg/kg per d) for 4 weeks. Housing in small cages decreased tibialis anterior (TA) muscle mass and the cross-sectional area of the myofibres in TA muscle. Dietary oleamide alleviated the decreases in TA muscle and resulted in plasma oleamide concentration of approximately 120 nm in mice housed in small cages. Housing in small cages had no influence on the phosphorylation levels of Akt serine/threonine kinase (Akt), mechanistic target of rapamycin (mTOR) and ribosomal protein S6 kinase (p70S6K) in TA muscle; nevertheless, oleamide increased the phosphorylation levels of the proteins. Housing in small cages increased the expression of microtubule-associated protein 1 light chain 3 (LC3)-II and sequestosome 1 (p62), but not LC3-I, in TA muscle, and oleamide reduced LC3-I, LC3-II and p62 expression levels. In C2C12 myotubes, oleamide increased myotube diameter at ≥100 nm. Furthermore, the mTOR inhibitor, Torin 1, suppressed oleamide-induced increases in myotube diameter and protein synthesis. These results indicate that dietary oleamide rescued TA muscle atrophy in mice housed in small cages, possibly by activating the phosphoinositide 3-kinase/Akt/mTOR signalling pathway and restoring autophagy flux.

In recent years, the discovery of massive quasars at $z\sim7$ has provided a striking challenge to our understanding of the origin and growth of supermassive black holes in the early Universe. Mounting observational and theoretical evidence indicates the viability of massive seeds, formed by the collapse of supermassive stars, as a progenitor model for such early, massive accreting black holes. Although considerable progress has been made in our theoretical understanding, many questions remain regarding how (and how often) such objects may form, how they live and die, and how next generation observatories may yield new insight into the origin of these primordial titans. This review focusses on our present understanding of this remarkable formation scenario, based on the discussions held at the Monash Prato Centre from November 20 to 24, 2017, during the workshop ‘Titans of the Early Universe: The Origin of the First Supermassive Black Holes’.

We propose a new method to verify that a higher-order, tree-processing functional program conforms to an input/output specification. Our method reduces the verification problem to multiple verification problems for higher-order multi-tree transducers, which are then transformed into higher-order recursion schemes and model-checked. Unlike previous methods, our new method can deal with arbitrary higher-order functional programs manipulating algebraic data structures, as long as certain invariants on intermediate data structures are provided by a programmer. We have proved the soundness of the method and implemented a prototype verifier.

NiO is a typical material for new p-type oxide semiconductors. Conductivity of NiO can be raised with Li+ doping. In case of Li-heavy doping, we can obtain LixNiO2(0.5< × <1.0). Recently the importance of LiNiO2 has been increased as an electrode material for rechargeable lithium cells.

In this work, we tried to fabricate a novel NiO material with Li+-heavily doped by applying the pulsed laser-induced room temperature (R.T.) film process. Previously, we have succeeded in the epitaxial growth of various oxide thin films at R.T. such as Sn-doped In2O3 transparent electrodes [1]. Although the many studies have been made on the deposition of NiO epitaxial thin film at low temperatures [2], there are few reports on fabrication and the conductive characteristic for Li-heavily doped NiO epitaxial films. The film deposition at R.T., which is the unequilibrium vapor phase process, is expected to result in different crystal structure and characteristics from the films grown at high-temperatures.

A composition-adjusted thin film of LixNi1-xO(0.10< × <0.40) was deposited on a sapphire (α-Al2O3)(0001) or MgO(100) substrates by pulsed laser deposition (PLD) technique in 10−6 Torr of oxygen at R.T. and the high temperatures of 350 and 515°C. Crystalline properties of thin films deposited at R.T. or high temperatures were examined using reflection high energy electron diffraction (RHEED) and X-ray diffraction. For the Li-heavily doped NiO films(x>0.30) grown at R.T., a clear streak RHEED pattern showing epitaxial growth was observed. But the Li-heavily doped NiO films grown at high temperatures, exhibited the ring RHEED pattern, which indicates the policrystal growth of films. Electric conductivity of various Li-doped NiO thin films deposited at R.T. or high temperatures on sapphire (0001) substrates were measured by two-probe method. The interesting results were obtained that conductivity of the film was increased remarkably with an increase of Li-doping for R.T. deposition, but was not changed so much regardless of Li-doping for high-temperature depositions.

The thermoelectric (TE) properties, such as the Seebeck coefficient, the electrical and thermal conductivities, and the output power, of Sb-doped n-type Mg2Si were studied. A commercial polycrystalline source was used for the source material for the Mg2Si. TE elements with Ni electrodes were fabricated by using a monobloc plasma-activated sintering (PAS) technique. Compared with undoped samples, the ZT values of the Sb-doped samples were higher over the whole temperature range in which measurements were made; the maximum value for the Sb doped Mg2Si was 0.72 at 864 K. The TE characteristics of Sb-doped samples were found to be comparable to those of Bi-doped ones, and no significant difference in ZT value was observed between them. Provisional results showed that the maximum value of the output power was 6.75 mW for the undoped sample, 4.55 mW for a 0.5 at% Sb doped sample, and 5.25 mW for a 1 at% Sb doped sample with ΔT = 500 K (between 873 K and 373 K).

There are two ways to write a program for manipulating tree-structured data such as XML documents: One is to write a tree-processing program focusing on the logical structure of the data and the other is to write a stream-processing program focusing on the physical structure. While tree-processing programs are easier to write than stream-processing programs, tree-processing programs are less efficient in memory usage since they use trees as intermediate data. Our aim is to establish a method for automatically translating a tree-processing program to a stream-processing one in order to take the best of both worlds. We first define a programming language for processing binary trees and a type system based on ordered linear type, and show that every well-typed program can be translated to an equivalent stream-processing program. We then extend the language and the type system to deal with XML documents. We have implemented an XML stream processor generator based on our algorithm, and obtained promising experimental results.

The crystal growth of lanthanum hexaboride (LaB6) thin films was examined by applying the laser molecular beam epitaxy (laser MBE) process. C-axis (100) highly-oriented LaB6 thin films could be fabricated on ultrasmooth sapphire (α-Al2O3 single crystal) (0001) substrates with atomic steps of 0.2 nm in height and atomically flat terraces. The obtained film exhibited a smooth surface with root mean square roughness of 0.15 nm. The lattice parameter of the LaB6 thin film was close to the bulk value reported previously. In the case of deposition on commercial mirror-polished sapphire substrates, the grown film was amorphous. The resistivity of the prepared crystalline LaB6 thin films was as low as 2.2 × 10−4 Ω cm and almost constant in the temperature range of 10–300 K.

Virtual Observatory (VO) is an emerging astronomical infrastructure for sharing the astronomical data set in the world. National Astronomical Observatory of Japan (NAOJ) started its VO project (Japanese Virtual Observatory – JVO) in 2002, and developed JVO portal prototypes. We have carried out several science use cases, such as cosmic string searches and QSO environment studies, by using the prototype system to examine the functionality of the system. This paper describes a preliminary result of the latter science use case.

A nanometer-scale ZnO light emission array device was fabricated using the multi-level metallization technique of the CMOS process. Square arrays of pits with an inverted pyramid shape made from {111}Si planes were formed on a (100)Si substrate using selective etching. ZnO was deposited on the substrate by chemical vapor deposition (CVD), and the surface of the deposited ZnO film was carefully polished by chemical mechanical planarization (CMP). As a result, ZnO-filled nanometer-scale arrays were obtained after removing the ZnO layer except for the ZnO in the pits by CMP. Cathodoluminescence (CL) from the ZnO arrays was observed.

Poly-tetrafluoroethylene [PTFE] presents few rejections in a living body but has low tissue affinity. Then, the soft tissue implant material that has not only high biocompatibility but also superb bondability has been developed by photo-chemically substituting the hydrophilic of –OH or –NH2 groups on the PTFE surface with V-UV photon irradiation. The protein adsorption of the sample before and after treatment was also evaluated by scanning electron microscope [SEM] and attenuated total reflection Fourier-transform infrared [ATR FT-IR], using bovine serum albumin [ALB] and fibrin [FIB] solution as a protein index in biocompatibility test. From the results, it has been confirmed that the protein adsorption increased with the increase in the hydrophilic group's substitution density. The -OH incorporated sample adsorbed the ALB and FIB more than the -NH2 incorporated sample; the amount of the ALB and FIB sticking became 2.3 times larger than that of the non-treatment sample.

Optical spectroscopy characterization of carbon nanotube samples requires accurate determination of their band structure and exciton binding energies. In this paper, we present a non-orthogonal density-functional based tight-binding calculation for the electronic transition energies in single-wall carbon nanotubes. We show that the curvature-induced rehybridization of the electronic orbitals, long-range atomic interactions, and geometrical structure relaxation all have a significant impact on the electronic transition energies in the small diameter limit. After including quasiparticle corrections and exciton binding energies, the calculated electronic transition energies show good agreement with the experimental transition energies observed by photoluminescence and resonance Raman spectroscopy.

Electron transport properties and DC device characteristics have been examined in the AlGaN/GaN heterostructure field-effect transistors (HFETs) with back-doping design that makes it possible to obtain high two-dimensional electron gas (2DEG) densities even for the devices with thin AlGaN barrier layers. In the back-doping design, an asymmetric double-heterostructure is employed, and donor atoms are doped not only in the surface-side AlGaN layer but also in the underlying AlGaN layer. In this structure, electrons are efficiently supplied also from the back-doped AlGaN barrier layer to the GaN channel and merged into a single 2DEG layer, with the help of the negative polarization charges at the heterointerface between the GaN channel and the underlying AlGaN barrier layer. By using back-doping design, very high 2DEG densities around 3×1013 cm−2 has been achieved in the Al0.3Ga0.7N/GaN HFET whose barrier layer (Al0.3Ga0.7N) is designed to be as thin as 120 Å. An HFET with the gate-length of 1.5 μm has exhibited a high current density of 1.2 A/mm and a high transconductance of 200 mS/mm, which is ascribed to high 2DEG densities and thin barrier layers in these devices. HFETs with the back-doping design are thus promising for high-power applications.

We improved the extraction of ultraviolet light from AlGaN-based light emitting diodes (LEDs) at the wavelength of about 350 nm, by introducing a transparent structure that is free from binary GaN. We used an AlN-template layer on a sapphire substrate as starting medium of the metal organic vapor phase epitaxial growth. The buffer layer is an Al0.2Ga00.8N alloy. We also used a short period alloy superlattice as transparent and conductive p-type cladding and p-type contact layers. The resultant epitaxial structure is confirmed to be transparent with the transmittance of about 90% within the wavelength range of 340 – 400 nm. The crystal quality of the Al0.2Ga00.8N buffer layer was estimated by the transmission electron microscope (TEM) observation. The dislocation density of AlGaN buffer layer was highly reduced on the AlN template layer, both of which have a low density of screw and mixed-type dislocations, of the order of 10−8cm−2. We also found that light extraction is improved by a factor of 6 by introducing the transparent LED structure and a p-contact mirror. The resultant LED shows high performance under RT-CW operation, where 1 mW output power at 348 nm with 20 mA injection corresponds to the external quantum efficiency of 1.4 %. The maximum power was 7 mW at 220 mA. The emission spectrum is highly monochromatic with the UV-to-visible intensity ratio of about 1000. We also demonstrate the application of this transparent UV-LED to white light source in a bottom-emission geometry.

Recently, SEM (Scanning Electron Microscope) and the other observation devices are coming to use a LAN (Local Area Network) to save the image in the database. We developed a remote control system in which SEM image and Control interface is indicated on the WEB Browser. in this system, SEM can be controlled by an external (client) PC installed in a general WEB Browser(Internet Explorer). Accordingly, operation interface can be indicated on the WEB browser.

A JSM-6700F is connected to a LAN, and so the microscope can be controlled by a client PC. Figure. 1 shows the block diagram of SEM remote control system. The JSM-6700F has two lines to the LAN for image transfer and communication with the SEM control. in order to transfer the image, the image size squeezes from 1280 × 1024-pixels (SEM image size) to 640 × 480-pixels for quick transfer. The image signal (640 × 480-pixels) is connected to the video server only, and then the image transfers to the client PC via LAN . The SEM control communicates with client PC for external command. On the other hand, the SEM control interface and the image are indicated on WEB Browser (Internet explorer) as shown Figure 2. The SEM control interface is composed of the SEM image area and the SEM control part. The SEM image indicates the 640×480-pixels live image. This pixel number was an image quality sufficient to adjust the focus. When a high quality image is necessary, the image of 1280 × 1024-pixels is saved on the the SEM(server) side by choosing the image save button.

We fabricated pnp GaN bipolar junction transistors and investigated their common-emitter and common-base current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its electron concentration was estimated to be 3 × 1017 cm-3 from the common-emitter current-voltage characteristics and the base conductivity. The common-emitter current-voltage characteristics showed very low leak current. The maximum current gains at room temperature were 50 and 69 from the common-emitter and the common-base current-voltage characteristics, respectively.