3 results
Reduction in Background Carrier Concentration for 4H-SiC C-face Epitaxial Growth
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- Journal:
- MRS Advances / Volume 1 / Issue 54 / 2016
- Published online by Cambridge University Press:
- 10 May 2016, pp. 3631-3636
- Print publication:
- 2016
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Reduction of incorporation of B, Al, Ti and N in 4H-SiC epitaxial-layer grown by chemical vapor deposition at higher growth temperature
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- Journal:
- MRS Online Proceedings Library Archive / Volume 680 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, E3.9
- Print publication:
- 2001
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- Article
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Slow Decay of Reflection High Energy Electron Diffraction Oscillations in Cal1-xMgxF2
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- Journal:
- MRS Online Proceedings Library Archive / Volume 441 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 45
- Print publication:
- 1996
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- Article
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