Search

For the first time, we discuss the compatibility of stress proximity technique (SPT) with dual stress liner (DSL) in high-κ/metal gate (HK/MG) technology. The short-channel mobility enhancement and the drive current improvement brought by SPT have been demonstrated at 32nm technology node. With maintained short channel control and threshold voltage roll-off characteristics, SPT has achieved 7% drive current improvement for both nFET and pFET from the optimization of SPT with DSL.

Phase-selective growth of TlBa2Ca2Cu3O9−x films is greatly enhanced by annealing chemical vapor deposition derived BaCaCuO(F) precursor films in the presence of TlF. Nucleation of superconducting phases (≥840 °C under O2) progresses in the order 2212 → 2223 → 1212 → 1223. Annealing at 855 °C results in well-defined platelet grains, a significant number of which are a-axis oriented. Residual fluoride is not detectable at any stage of the annealing process. Thin films synthesized by TlF annealing differ markedly from films processed in the presence of Tl2O3 with Tc = 103 K and Jc > 105 A/cm2 (5 K, 4.5 T).

Search Results

Refine search

Refine search

Actions for selected content:

2 results

Stress Liner Proximity Technique to Enhance Carrier Mobility in High-κ Metal Gate MOSFETs

Analysis of the fluoride effect on the phase-selective growth of TlBa2Ca2Cu3O9−x thin films: Phase evolution and microstructure development

Search Results

Refine search

Refine search

Actions for selected content:

Save Search

2 results

Stress Liner Proximity Technique to Enhance Carrier Mobility in High-κ Metal Gate MOSFETs

Analysis of the fluoride effect on the phase-selective growth of TlBa2Ca2Cu3O9−x thin films: Phase evolution and microstructure development