The practical application of yield loss prediction models using relative leaf area of weeds is limited due to the lack of a quick and accurate method of leaf area estimation. Leaf cover (the vertical projection of plant canopy on the ground) can be used to approximate leaf area at early stages of plant development. An automated digital image analysis system for measuring leaf cover has been developed. The system has an operator-assisted module aimed at validating the automated functions. The objective of this research was to demonstrate the accuracy of the operator-assisted module under different weed–crop conditions. A laboratory experiment was conducted using simulated weed–crop populations. Two additional field experiments were conducted using corn in competition with: (1) common lambsquarters, barnyardgrass, or a mixture of both species, and (2) a natural weed community. In the laboratory experiment, a narrow linear relation was observed between leaf cover estimated with the operator-assisted module and leaf area measured with an optical area meter (r 2 > 0.98). In field experiments, the regression between corn leaf cover estimated by the operator-assisted module and corn leaf area measured with the optical area meter was not as good (r 2 < 0.55). The poor performance of the module was probably due to the overlapping and the architecture of corn leaves (especially unexpanded leaves). Nevertheless, the system showed high precision in estimating leaf area of both grassy weeds and broadleaf weeds (r 2 > 0.89). Generally, the accuracy of the estimates decreased as the growth stage became more advanced. Apart from its initial purpose as a calibration tool for the automated system, the operator-assisted module can have several potential research applications. It can be used: (1) as an alternative to destructive leaf area measurement at early stages of plant development, (2) as a tool in the study of plant competitive ability, and (3) as an objective and quantitative support to visual observations.

The relative leaf area of weeds is a good predictor of the outcome of weed-crop competition. However, this variable has not been used in decision-making tools for integrated weed management because leaf area cannot be measured quickly. A powerful image analysis system for measuring leaf cover (the vertical projection of plant canopy on the ground) has been developed and validated. This research was conducted to compare the efficiency of weed relative leaf area and relative leaf cover in predicting corn yield loss. Field studies were conducted in 1996 and 1997 using varying densities of common lambsquarters, barnyardgrass, common lambsquarters plus barnyardgrass, and a natural weed community. Corn grain yield and biomass loss varied with weed infestation type and year. Values of the relative damage coefficient of weeds (q) were smaller in 1997 compared with 1996. For both years, the relative leaf area of weeds was an adequate predictor of corn yield loss (r 2 varied from 0.61 to 0.92). The precision of the predictions was not influenced by the leaf area sampling period (four- or eight-leaf stage of corn). In general, smaller values of q and m (predicted maximum yield loss) were obtained as a consequence of using the relative leaf cover of weeds in model fitting. However, percentages of variation explained by the model (from 0.67 to 0.90) were similar to values obtained with the relative leaf area. On the basis of the residual mean squares, neither of the variables could be declared superior to the other in yield loss prediction. The development of weed control decision-making tools using the relative leaf cover of weeds may require improvements prior to being used in weed management systems. Such improvements would include use of appropriate sampling and image-processing techniques, development and validation of empirical models specific to individual situations, and proper identification of the crop growth stage at which leaf cover must be assessed.

We present an overview of our work concerning the fabrication of GaN-based microcavities grown on silicon substrates dedicated to the observation of the strong light-matter coupling regime. In the view of recent promising results in the field, prospects regarding the improvement of heterostructures in order to observe room temperature polariton lasing from a GaN-based microcavity grown on a silicon substrate will be discussed.

Optical properties of GaN templates grown by the Epitaxial Lateral Overgrowth (ELO) technique along the nonpolar (1120) and the semipolar (1122) directions on R- and M-sapphire were investigated. Spatially resolved Cathodoluminescence (CL) was carried out in order to identify defect related transitions, to resolve their localization and to study the efficiency of ELO concerning defect filtration. The wing region of semipolar GaN is shown to be almost defect free with a luminescence spectrum dominated by the GaN emission at 3,472 eV. It is shown that the defect related emissions are localized in the seed, but different defects occur as well in the wing, especially in A-plane (nonpolar) GaN.

We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities. Angle dependent reflectivity measurements demonstrate strong-coupling with a Rabi-energy of 50meV at room temperature which is well reproduced with transfer matrix simulations. The absence of strong coupling in the photoluminescence is attributed to the low finesse of the microcavity (Q=60) and is confirmed by simulations which indicate a quality factor of 90 is required to observe strong-coupling in the emission.

Gene constructs containing the Cauliflower mosaic virus (CaMV) 35S promoter and a sequence coding either for a green fluorescent protein (GFP) or for firefly luciferase were transfected into Chinese hamster ovary (CHO) cells. Both reporter genes were expressed to significant levels. The 35S promoter was 40 times less active than the human eF1α promoter, which is known to be one of the most potent promoters in mammalian cells. The 35S promoter must therefore be considered to be a promoter of significant potency in mammalian cells. RT-PCR analysis suggested that transcription initiation in CHO cells occurred between the TATA box and the transcription start site of the 35S promoter that function in plant cells. Further analysis by 5’RACE confirmed that transcription was initiated in CHO cells at different sites located essentially between the TATA box and the plant transcription start site, showing that 35S promoter activity in animal cells is due to the presence of promoter elements that are functional in mammalian cells, but that are not those used in plants. The data reported here raise the possibility that genes controlled by the 35S promoter, which is commonly used in transgenic plants, have the potential for expression in animal cells.

AlGaN/GaN quantum well (QWs) were grown on (0001) sapphire substrates by molecular beam epitaxy (MBE) using ammonia as nitrogen precursor. The Al composition in the barriers was varied between 8 and 27 % and the well thickness from 4 to 17 monolayers (MLs, 1ML = 2.59Å). X-ray diffraction (XRD) experiments are used to investigate the strain state of both the well and the barriers. The QW transition energy are measured by low temperature photoluminescence (PL). A large quantum confined Stark effect is observed leading to QW luminescence much lower than the emission line of the GaN buffer layer for well width above a certain critical thickness. The built-in electric field responsible for such a phenomenon is deduced from fit of the PL data. Its magnitude is of several hundred kV/cm and increases linearly with the Al composition.

We analyze the low-temperature photoluminescence decay times, for a series of MBE-grown samples embedding GaN-AlGaN quantum wells. We investigate a variety of configurations in terms of well widths, barrier widths and overall strain states. We find that not only the wells but also the barriers are submitted to large built-in electric fields. In the case of narrow barriers (5 nm), these fields favor the nonradiative escape of carriers from narrow wells into wider wells. When all wells have the same width, the field in such narrow barriers allow us to observe the recombination of long-lived “inter-well” excitons at energies close to those of the short-lived “intra-well” excitons. Our results also prove that the energies and the dynamics of excitonic recombinations depend on the parameters of the heterostructures in a complicated way, due to the interplay of piezoelectric and spontaneous polarizations.

The growth of InGaN layers was carried out by molecular beam epitaxy (MBE). The nitrogen precursor was ammonia. The optical and structural properties of the InGaN layers have been investigated by transmission electron microscopy (TEM), x-ray diffraction (XRD) and photoluminescence (PL). For optimized growth conditions, the PL spectrum of InGaN (x=0.1) alloy is narrow (FWHM ≤ 50 meV) and the Stokes shift measured by PL excitation is weak (<50 meV), i.e. near band edge transitions are observed. Under these conditions, flat surfaces can be obtained, and InGaN/GaN quantum wells (QWs) with sharp interfaces can be grown. On the other hand, when growth conditions depart from a narrow optimum window, the structural quality of the samples strongly degrade, whereas the luminescence spectra are dominated by deep levels, exhibiting a strong Stokes shift. MBE grown light emitting diodes (LEDs) using InGaN/GaN QWs have been fabricated. Their electroluminescence (EL) peaks at 440 nm at 300K.

We analyze the low-temperature photoluminescence decay times, for a series of MBE-grown samples embedding GaN-AlGaN quantum wells. We investigate a variety of configurations in terms of well widths, barrier widths and overall strain states. We find that not only the wells but also the barriers are submitted to large built-in electric fields. In the case of narrow barriers (5 um), these fields favor the nonradiative escape of carriers from narrow wells into wider wells. When all wells have the same width, the field in such narrow barriers allow us to observe the recombination of long-lived “inter-well” excitons at energies close to those of the short-lived “intra-well” excitons. Our results also prove that the energies and the dynamics of excitonic recombinations depend on the parameters of the heterostructures in a complicated way, due to the interplay of piezoelectric and spontaneous polarizations.

The growth of InGaN layers was carried out by molecular beam epitaxy (MBE). The nitrogen precursor was ammonia. The optical and structural properties of the InGaN layers have been investigated by transmission electron microscopy (TEM), x-ray diffraction (XRD) and photoluminescence (PL). For optimized growth conditions, the PL spectrum of InGaN (x=0.1) alloy is narrow (FWHM ≤ 50 meV) and the Stokes shift measured by PL excitation is weak (<50 meV), i.e. near band edge transitions are observed. Under these conditions, flat surfaces can be obtained, and InGaN/GaN quantum wells (QWs) with sharp interfaces can be grown. On the other hand, when growth conditions depart from a narrow optimum window, the structural quality of the samples strongly degrade, whereas the luminescence spectra are dominated by deep levels, exhibiting a strong Stokes shift. MBE grown light emitting diodes (LEDs) using InGaN/GaN QWs have been fabricated. Their electroluminescence (EL) peaks at 440 nm at 300K.

AIGaN/GaN quantum well (QWs) were grown on (0001) sapphire substrates by molecular beam epitaxy (MBE) using ammonia as nitrogen precursor. The Al composition in the barriers was varied between 8 and 27 % and the well thickness from 4 to 17 monolayers (MLs, 1ML = 2.59Å). X-ray diffraction (XRD) experiments are used to investigate the strain state of both the well and the barriers. The QW transition energy are measured by low temperature photoluminescence (PL). A large quantum confined Stark effect is observed leading to QW luminescence much lower than the emission line of the GaN buffer layer for well width above a certain critical thickness. The built-in electric field responsible for such a phenomenon is deduced from fit of the PL data. Its magnitude is of several hundred kV/cm and increases linearly with the Al composition.