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We report on a novel light sensing scheme based on a silicon/fullerene-derivative hetero-junction that allows the realization of optoelectronic devices for the detection of near to mid infrared radiation. Despite the absent absorption of silicon and the fullerene-derivative for wavelengths beyond 1.1 µm and 0.72 µm, respectively, a hetero-junction of these materials absorbs and generates a photo-current due to absorption in the near to mid infrared. This photo-current is caused by an interfacial absorption mechanism .
Besides its scientific relevance, the simple fabrication process of the hetero-junction (e.g. the fullerene-derivative is deposited by spin-coating on Si) as well as its compatibility with the established and rather cheap CMOS technology makes the presented hybrid approach a promising candidate for widespread applications.
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