Dimethyl(1,1,1,5,5,5-hexafluoroaminopenten-2-onato)Au(III), DMAu(hfap) was found to be very promising compound for CVD Au wiring. It is liquid at r.t. and has high vapor pressure (0.5 Torr at r.t.) and high thermal stability (dec.t. 171°C, δE=25.4Kcal/mol) and can be used as a precursor for MOCVD. CVD gold films were grown on Si(100) from DMAu(hfap) in a quartz vacuum chamber, using thermal activation by an electric heater or photo activation through quartz windows by excimer lasers(XeC1 308nm). A growth rate of 10 nm/min was achieved by thermal activation at 250 °C, (evaporation temperature of 30 °C, H2 flow rate at 100 sccm and chamber pressure of 30 Torr). Resistivities ranged between 2.8 and 5.lμΩ-cm, depending on the film morphology. The growth rate of laser CVD gold films had the tendency of increasing with decreasing the substrate temperature. This phenomenon indicates that photolysis of adsorbed species on the substrate plays an important role in film growth by laser CVD.